Infineon Technologies Ag

Manfred Frank

Thomas Kunstmann

Ivan Nikitin

Manfred Engelhardt

Carsten Ahrens

Guenther Ruhl

Hans-Joerg Timme

Wolfgang Lehnert

Ulrich Krumbein

Werner Robl

Rudolf Berger

Uwe Hoeckele

Bernhard Knott

Stefan Willkofer

Berthold Schuderer

Juergen Wagner

Werner Kröninger

Reinhard Fischbach

Heinz Opolka

Eva-Maria Hess

Ivan Nikitn

Renate Köpnick

Richard Hummel

Michael Krenzer

A method for processing a workpiece may include: providing a workpiece including a first region and a second region; forming a porous metal layer over the first region and the second region; wherein the first region and the second region are configured such that an adhesive force between the second region and the porous metal layer is lower than an adhesive force between the first region and the porous metal layer.

Method for processing a workpiece by forming a pourous metal layer

A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.

Method for producing a semiconductor device

According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.

Method for processing a semiconductor wafer or die, and particle deposition device

One or more embodiments may relate to a method for making a semiconductor structure, the method including: forming an opening at least partially through a workpiece; and forming an enclosed cavity within the opening, the forming the cavity comprising forming a paste within the opening.

Semiconductor device and method for making same

To increase the scratch resistance of a surface passivation, in particular, for fingerprint sensors, a antifrictional layer is applied to reduce the shearing forces. The antifrictional layer includes fat, oil, surfactants and/or wax. The antifrictional layer is preferably an emulsion including water, paraffin oil, propylene glycol, stearic acid, palmitic acid, TEA, beeswax, carbormer 954, methylparaben, propylparaben and possibly perfume.

Scratch-resistant coating for a semiconductor component

Growing community of inventors

Nittendorf, Germany

Manfred Frank