Infineon Technologies Ag

Infineon Technologies Austria Ag

Manfred Engelhardt

Volker Weinrich

Michael Roesner

Gudrun Stranzl

Martin Zgaga

Franz Kreupl

Johannes Baumgartl

Guenther Schindler

Edward Fuergut

Carsten Von Koblinski

Volker Strutz

Hannes Eder

Hans-Joachim Schulze

Markus Zundel

Walter Hartner

Hermann Wendt

Hans-Joerg Timme

Ingo Muri

Frank S Hintermaier

Oliver Hellmund

Iris Moder

G&uuml;nther Schindler

Georg Ehrentraut

Joachim Hirschler

Werner Pamler

Hubert Maier

Michael Schrenk

Karl Mayer

Andreas Stich

Joachim Mahler

Horst Theuss

Francisco Javier Santos Rodriguez

Bernhard Sell

Rainer Leuschner

Guenther Ruhl

Bernhard Goller

Irmgard Escher-Poeppel

Siegfried Schwarzl

Rainer Bruchhaus

Werner Robl

Olaf Storbeck

Stefan Wurm

Matthias Kuenle

Carlos Mazure-Espejo

Manfred Kotek

Wolfgang Hönlein

Thomas Kunstmann

Eugen Unger

Annette Sänger

Petra Fischer

Wolfgang H&ouml;nlein

Bernd Roemer

Manfred Frank

Johann Schmid

Christian Illemann

Monika Cornelia Voerckel

Helmut Brunner

Bernhard Boche

Gernot Steinlesberger

Peter Thieme

Guenter Tutsch

Manuela Schiele

Bernd Noehammer

Karl Adolf Dieter Mayer

Ivan Nikitn

Heike Drummer

A CVD reactor, including a deposition chamber housing a first susceptor and a second susceptor, the first susceptor having a cavity for receiving a first substrate, the first substrate having a front surface and a back surface, the second susceptor having a cavity for receiving a second substrate, the second substrate having a front surface and a back surface, and the first susceptor and the second susceptor are disposed so that the front surface of the first substrate is opposite to the front surface of the second substrate thereby forming a portion of a gas flow channel.

Apparatus and method for chemical vapor deposition process for semiconductor substrates

An integrated circuit substrate and a method for manufacturing the same are disclosed. In an embodiment a method includes providing a wafer having a plurality of active areas, each active area being provided in a separate die area and for each active area, providing a code pattern outside the active area, the code pattern being associated with the die area.

Integrated circuit substrate and method for manufacturing the same

A segmented edge protection shield for plasma dicing a wafer. The segmented edge protection shield includes an outer structure and a plurality of plasma shield edge segments. The outer structure defines an interior annular edge configured to correspond to the circumferential edge of the wafer. Each one of the plurality of plasma shield edge segments is defined by an inner edge and side edges. The inner edge is interior to and concentric to the annular edge of the outer structure. The side edges extend between the inner edge and the annular edge.

Segmented edge protection shield

A plasma system includes a plasma chamber comprising a chamber wall with a first focal line and a second focal line disposed within the chamber wall. A first antenna is disposed within the plasma chamber at the first focal line. The chamber wall is configured to focus radiation from the first antenna on to the second focal line.

Plasma systems and methods of processing using thereof

The semiconductor processing system includes a reactor chamber that has an upper wall and a lower wall. A hold member is disposed in the reactor chamber to hold a semiconductor substrate in such a way that it faces the lower wall of the reactor chamber.

Semiconductor processing system

Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.

Methods for processing a semiconductor workpiece

A method for forming a plurality of semiconductor devices includes forming a plurality of trenches extending from a first lateral surface of a semiconductor wafer towards a second lateral surface of the semiconductor wafer. The method further includes filling a portion of the plurality of trenches with filler material. The method further includes thinning the semiconductor wafer from the second lateral surface of the semiconductor wafer to form a thinned semiconductor wafer. The method further includes forming a back side metallization layer structure on a plurality of semiconductor chip regions of the semiconductor wafer after thinning the semiconductor wafer. The method further includes removing a part of the filler material from the plurality of trenches after forming the back side metallization layer structure to obtain the plurality of semiconductor devices.

Semiconductor device and methods for forming a plurality of semiconductor devices

A chuck, a system including a chuck and a method for making a semiconductor device are disclosed. In one embodiment the chuck includes a first conductive region configured to be capacitively coupled to a first RF power generator, a second conductive region configured to be capacitively coupled to a second RF power generator and an insulation region that electrically insulates the first conductive region from the second conductive region.

Plasma system, chuck and method of making a semiconductor device

In accordance with an embodiment of the present invention, a process tool includes a chuck configured to hold a substrate. The chuck is disposed in a chamber. The process tool further includes a shielding unit with a central opening. The shielding unit is disposed in the chamber over the chuck.

Process tools and methods of forming devices using process tools

A method of forming a semiconductor device includes forming an active region in a first side of a silicon carbide substrate, the silicon carbide substrate having a second side opposite the first side and forming a contact pad at the first side. The contact pad is coupled to the active region. The method further includes forming an etch stop layer over the contact pad and plasma dicing the silicon carbide substrate from the second side. The plasma dicing etches through the silicon carbide substrate and stops on the etch stop layer. The diced silicon carbide substrate is held together by the etch stop layer. The diced silicon carbide substrate is attached on a carrier. The diced silicon carbide substrate is separated into silicon carbide dies by cleaving the etch stop layer.

Plasma dicing of silicon carbide

The description discloses a method for use in manufacturing integrated circuit chips. The method comprises providing a wafer having a plurality of integrated circuits each provided in an separate active areas, and, for each active area, outside the active area, providing a code pattern that is associated with the integrated circuit. A computer-readable medium is also disclosed. Further, a manufacturing apparatus configured to receive a wafer and to remove material from the wafer so as to provide a scribe line to the wafer formed as a trench for use in separation of the wafer into dies is also disclosed. The description also discloses a wafer, an integrated circuit chip die substrate originating from a wafer of origin and carrying an integrated circuit, and an integrated circuit chip.

A method of producing a semiconductor device is provided. The method includes: providing a semiconductor wafer, the wafer including an upper layer of a semiconductor material, an inner etch stop layer and a lower layer; forming a plurality of functional areas in the upper layer; performing a selective first etch process on the upper layer so as to separate the plurality of functional areas from each other by trenches etched through the upper layer, the first etch process being substantially stopped by the inner etch stop layer; and removing the lower layer by a second etch process, the second etch process being substantially stopped by the inner etch stop layer.

Method of producing a semiconductor device and a semiconductor device

A method for fabricating a semiconductor device includes forming an opening in a first epitaxial lateral overgrowth region to expose a surface of the semiconductor substrate within the opening. The method further includes forming an insulation region at the exposed surface of the semiconductor substrate within the opening and filling the opening with a second semiconductor material to form a second epitaxial lateral overgrowth region using a lateral epitaxial growth process.

Substrates with buried isolation layers and methods of formation thereof

According to various embodiments, a method may include: disposing a dopant in a semiconductor region; forming a radiation absorption layer including or formed from at least one allotrope of carbon over at least a portion of the semiconductor region; and activating the dopant at least partially by irradiating the radiation absorption layer at least partially with electromagnetic radiation to heat the semiconductor region at least partially.

Method for thermal annealing and a semiconductor device formed by the method

Growing community of inventors

Villach-Landskron, Austria

Manfred Engelhardt