Siemens Aktiengesellschaft

Manfred Druminski

Roland Gessner

Margit Beschorner

A semiconductor laser on an InP substrate having a first confinement layer and a second confinement layer of (Ga.sub.0.17 Al.sub.0.83).sub.0.48 In.sub.0.52 As and an active layer in quantum well structure having radiation-generating QW-layers of Ga.sub.1-y In.sub.y As.

Semiconductor laser in the system GaAlInAs

The invention relates to a method for the production of extremely flat silicon troughs in a silicon substrate for MOS-transistors. The object is generally achieved by a localized etching process resulting in a slightly anisotropic trough characteristic and a subsequent rate controlled filling by a selection epitaxy process of said trough with a silicon material. The process is found to minimize the deleterious non-uniformities inherent in the prior art.

Process for the production of extremely flat silicon troughs by

Method of producing epitaxially deposited layers of semiconductor material on a substrate by thermal decomposition of a gaseous compound of a select semiconductor material and depositing a seed layer of such semiconductor on the substrate and then adding a hydrogen halide to the gaseous compound and depositing additional semiconductor material on the seed layer.

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Vaterstetten, Germany

Manfred Druminski