Versum Materials Us, LLC

Air Products and Chemicals, Inc.

Tokyo Electron Limited

Manchao Xiao

Xinjian Lei

Mark Leonard O'Neill

Haripin Chandra

Matthew R MacDonald

Ronald Martin Pearlstein

Bing Han

Daniel P Spence

Richard Ho

Raymond Nicholas Vrtis

Meiliang Wang

Robert Gordon Ridgeway

Steven Gerard Mayorga

Anupama Mallikarjunan

Liu Yang

Thomas R Gaffney

Jianheng Li

Heather Regina Bowen

Arthur Kenneth Hochberg

Kirk Scott Cuthill

Hansong Cheng

Eugene Joseph Karwacki, Jr

John Anthony Thomas Norman

Jean Louise Vincent

Andrew David Johnson

Aaron Scott Lukas

Hareesh Thridandam

Agnes Derecskei-Kovacs

Suresh Kalpatu Rajaraman

Moo-Sung Kim

Iain Buchanan

Madhukar Bhaskara Rao

Robert George Syvret

William Robert Entley

Kazuhide Hasebe

Scott Jeffrey Weigel

Gauri Sankar Lal

Sergei Vladimirovich Ivanov

Wayne Thomas McDermott

Cheol Seong Hwang

Masato Yonezawa

Laura M Matz

Dino Sinatore

Masanobu Matsunaga

Jennifer Lynn Anne Achtyl

John Francis Lehmann

Sai-Hong Andrew Lo

Neil Osterwalder

Vasil Vorsa

Michael T Savo

Chenggang Zhou

Jinping Wu

Taehong Gwon

Chandra Haripin

Ming Li

Chia-Chien Lee

Eugene Jospeh Karwacki, Jr

Philip E Behm

Eugene Joseph Karwacki

Jingping Wu

Cheng Hansong

Tae Hong Gwon

Iain Buchanana

Mark Leonard O'NEILL

Hareesh Thtidandam

Jr Eugene Joseph Karwacki

Matthew R Macdonald

Steve Gerard Mayorga

Mark Leonard O'neill

Thomas Richard Gaffney

Moo-sung Kim

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.

Compositions and methods using same for deposition of silicon-containing film

A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.

Silicon compounds and methods for depositing films using same

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of a first compound comprising a carbon-carbon double or carbon-carbon triple bond and a second compound comprising at least one Si—H bond.

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of an at least one first compound comprising a C—C double or C—C triple bond.

Compositions comprising silacycloalkanes and methods using same for deposition of silicon-containing film

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Organoaminosilane precursors and methods for depositing films comprising same

Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.

Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films

Compositions for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, a trisilylamine-based compound, and a cyclic trisilazane compound.

Organoamino-functionalized cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the organoamino-functionalized cyclic oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.

Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films

Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.

Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films

Methods for forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate includes introducing into a reactor one or more compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB: as defined herein.

Methods for depositing silicon-containing films

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor; introducing into the reactor at least one silicon-containing compound and at least one multifunctional organoamine compound to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical properties.

Precursors and flowable CVD methods for making low-k films to fill surface features

Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of RN(SiRLH), wherein R, R, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

Compositions and processes for depositing carbon-doped silicon-containing films

A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RSiRwherein R is selected a linear or branched Cto Calkenyl group, a linear or branched Cto Calkynyl group; Ris selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Ccyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.

Stable alkenyl or alkynyl-containing organosilicon precursor compositions

Organoamino-polysiloxanes, which have at least three silicon atoms, oxygen atoms, as well as an organoamino group, and methods for making the organoamino-polysiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-polysiloxanes are also disclosed.

Organoamino-polysiloxanes for deposition of silicon-containing films

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.

Compositions and methods for the deposition of silicon oxide films

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San Diego, CA, United States of America

Manchao Xiao