Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Manabu Yano

Akira Ikegami

Hideyuki Kazumi

Kazunari Asao

Yuta Kawamoto

Minoru Yamazaki

Naomasa Suzuki

Yasushi Ebizuka

Naoma Ban

Takeshi Mizuno

Yuki Ojima

Muneyuki Fukuda

Maki Tanaka

Akira Hamamatsu

Chie Shishido

Hiroyuki Ito

Hajime Kawano

Atsushi Miyamoto

Tadashi Otaka

Noritsugu Takahashi

Tomoyasu Shojo

Hideto Dohi

Hirohiko Kitsuki

Yutaka Tandai

Ryoichi Ishii

The present disclosure aims at proposing a multi-beam irradiation device capable of correcting off-axis aberrations. In order to achieve the above object, a beam irradiation device is proposed, which includes a beam source which emits a plurality of beams; an objective lens () which focuses a beam on a sample; a first lens () which is arranged such that a lens main surface is positioned at an object point of the objective lens and deflects a plurality of incident beams toward an intersection point of a lens main surface of the objective lens and an optical axis; a second lens () which is arranged closer to a beam source side than the first lens and focuses the plurality of beams on a lens main surface of the first lens; and a third lens () which is arranged closer to the beam source side than the second lens and deflects the plurality of beams toward an intersection point of a lens main surface of the second lens and the optical axis.

Beam irradiation device

A purpose of the present invention is to provide a charged particle beam device that suppresses an off-axis amount when a field of view moves, said move causing an aberration, and allows large field of view moves to be carried out. In order to achieve the above-mentioned purpose, this charged particle beam device is provided with an objective lens and deflectors for field of view moves, said deflectors deflecting a charged particle beam, and is further provided with an accelerating tube positioned between the objective lens and the deflectors for field of view moves, a power source that applies a voltage to the accelerating tube, and a control device that controls the voltage to be applied to the power source in response to the deflection conditions of the deflectors for field of view moves.

Charged particle beam device

A model based measurement method is capable of estimating a cross-sectional shape by matching various pre-created cross-sectional shapes with a library of SEM signal waveforms. The present invention provides a function for determining whether or not it is appropriate to create a model of a cross-sectional shape or a function for verifying the accuracy of estimation results to a conventional model based measurement method, wherein a solution space (expected solution space) is obtained by matching library waveforms and is displayed before measuring the real pattern by means of model based measurement. Moreover, after the real pattern is measured by means of model based measurement, the solution space (real solution space) is obtained by matching the real waveforms with the library waveforms and is displayed.

Shape measurement method, and system therefor

A charged-particle-beam device is characterized in having a control value for an aligner coil () being determined by: a coil current and an electrode applied-voltage at a control value for objectives (), which is an electromagnetic-field superposition lens; a control value for image-shift coils (); and the acceleration voltage of the charged-particle-beam. By doing this, it has become possible to avoid image disturbances that occur on images to be displayed at boundaries between charged areas and non-charged areas, and provide a charged-particle-beam device that obtains clear images without any unevenness in brightness.

Charged-particle microscope

An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.

Scanning electron microscope

An exemplary a charged particle beam apparatus converts an inspection position on a test sample (wafer coordinate system) to a setting position of an inspection mechanism (stage coordinate system (polar coordinate system)), a rotating arm and a rotating stage being rotated to be moved for the inspection position on the test sample. In this case, inspection devices are arranged over a locus that is drawn by the center of the rotating stage according to the rotation of the rotating arm. A function for calculating errors (e.g., center shift of the rotating stage) and compensating for the errors is provided, by which the precision of inspection is improved in a charged particle beam apparatus equipped with a biaxial rotating stage mechanism.

Charged particle beam apparatus

Growing community of inventors

Hitachiomiya, Japan

Manabu Yano