Nissan Motor Company Limited

Meiji Seika Kaisha, Ltd.

Meiji Seika Pharma Co., Ltd.

Sanyo Chemical Industries, Ltd.

Japan As Represented by Director General of Agency of Industrial Science

Meji Seika Kaisha Ltd.

Manabu Watanabe

Nobutaka Chiba

Naomi Sumida

Osamu Tanaka

Masao Yoshida

Takeshi Murakami

Tomohiro Kaburagi

Koji Yanai

Takashi Yaguchi

Takayoshi Tamura

Naoki Mido

Youichi Yoshioka

Masaya Arai

Fumihiro Miki

Kaoru Aoyagi

Tatsuki Moriya

Takashi Sanada

Humihiro Miki

Hideaki Horie

Hiroshi Akama

Kensuke Yamamoto

Yasuhiro Shindo

Hiroshi Fukumoto

Kaoru Okakura

Tohru Wada

Naoki Midoh

Toru Hamaya

Koichi Miyamoto

Kei Kitaura

Makoto Tanimura

Yumiko Tsuyuki

Shinji Yamamoto

Atsushi Ito

Takashi Miyamoto

Koji Nishizawa

Toshiaki Kono

Wataru Ogihara

Jinichiro Koga

Hirokazu Komatsu

Takashi Yamanobe

Shohei Yasuda

Horst Kleinkauf

Kouichirou Murashima

Atsushi Itou

Naoki Ueda

Sato Aihara

Masaaki Nakahashi

Takehiro Miwa

Yoshie Hayashi

Yuichi Murayama

Miyako Yoshioka

Katsuhiro Miura

Tetsuya Yasutake

Takafumi Futamura

Yuka Aiso

Kohji Yanai

An object of the present invention is to provide a dispersant for a resin current collector which can uniformly disperse a conductive filler to attain sufficient charge and discharge characteristics without impairing the output power per unit weight of a battery. The present invention provides a dispersant for a resin current collector comprising a polymer having a resin-philic block (A1) and a conductive filler-philic block (A2).

Dispersant for resin collectors, material for resin collectors, and resin collector

A negative electrode for an electric device includes a silicon-containing alloy containing silicon and tin, a carbon cover layer including a carbon material and covering the silicon-containing alloy, and a negative electrode electric conducting additive. A ratio of an average particle diameter of the silicon-containing alloy to an average particle diameter of the carbon material is 240 or greater. The negative electrode for an electric device and an electric device using the negative electrode can improve cycle durability.

Negative electrode for electric device and electric device using the same

A negative electrode active material containing a Si-containing alloy having a composition to be represented by Chemical Formula (1): SiSnMAlA(in Chemical Formula (1) above, M is one or two or more transition metal elements, A is an unavoidable impurity, and x, y, z, w, and a represent values of percentage by mass, where y, z, and w are 2&#x2264;y&#x2264;10, 25&#x2264;z&#x2264;35, and 0.3&#x2264;w&#x2264;3, respectively, and x and a are remainder) is used in an electrical device, providing a means capable of improving the cycle durability of the electrical device such as a lithium ion secondary battery.

Negative electrode active material for electrical device and electrical device using the same

A negative electrode active material having high cycle durability contains an alloy represented by the following chemical formula (1):SiSnMA&#x2003;&#x2003;(1)wherein M is Zn, A is unavoidable impurities, x, y, z, and a represent % by mass values, and in that case, 0&#x3c;x&#x3c;100, 0&#x3c;y&#x3c;100, 0&#x3c;z&#x3c;100, 0&#x2264;a&#x3c;0.5, and x+y+z+a=100, in which the half width of the diffraction peak of the (111) surface of Si in the range of 2&#x3b8;=24 to 33&#xb0; by X ray diffraction measurement of the alloy using CuK&#x3b1; ray is 0.7&#xb0; or more, and the x is more than 23 and less than 64, the y is 4 or more and less than 34, and the z is more than 0 and less than 65.

Negative electrode active material for electrical device

A negative electrode active material including a silicon-containing alloy having a ternary alloy composition expressed by Si&#x2014;Sn&#x2014;Ti and including a structure in which an a-Si phase containing amorphous or low-crystalline silicon formed by dissolving tin in a crystal structure of silicon is dispersed in a parent phase of a silicide phase including TiSi, wherein when a peak intensity of a Si&#x2014;O bond peak that is observed at a position where an interatomic distance in a radial wave function observed by XAFS is 0.13 nm is S(1) and a peak intensity of a Si&#x2014;Si bond peak that is observed at a position where the interatomic distance is 0.2 nm is S(2), a relation of S(2)&#x3e;S(1) is satisfied is used for an electrical device. When used, the negative electrode active material achieves both cycle durability and charging-discharging efficiency for an electrical device such as a lithium ion secondary battery.

Negative electrode active material for electrical device, and electrical device including the same

The negative electrode for an electric device includes a current collector and an electrode layer containing a negative electrode active material, a conductive auxiliary agent and a binder and formed on a surface of the current collector, wherein the negative electrode active material contains an alloy represented by the following formula (1): SiSnMA(in the formula (1), M is at least one metal selected from the group consisting of Al, V, C and a combination thereof, A is inevitable impurities, and x, y, z and a represent mass percent values and satisfy the conditions of 0&#x3c;x&#x3c;100, 0&#x3c;y&#x3c;100, 0&#x3c;z&#x3c;100, 0&#x2264;a&#x3c;0.5, and x+y+z+a=100), and elastic elongation of the current collector is 1.30% or greater.

A negative electrode active material for an electric device includes an alloy containing greater than or equal to 29% by mass of silicon and containing tin, carbon and inevitable impurities as a residue.

Negative electrode active material for electric device, negative electrode for electric device and electric device

A negative electrode active material includes a silicon-containing alloy represented by: SiSnMA(A is unavoidable impurities, M is one or more transition metal elements, x, y, z, and a represent values of percent by mass, and 0&#x3c;x&#x3c;100, 0&#x3c;y&#x3c;100, 0&#x3c;z&#x3c;100, and 0&#x2264;a&#x3c;0.5 and x+y+z+a=100). The silicon-containing alloy has a lattice image subjected to Fourier transform processing to obtain a diffraction pattern. A distance between Si regular tetrahedrons is 0.39 nm or more when the distance between Si regular tetrahedrons in an amorphous region calculated from a Fourier image obtained by subjecting a diffraction ring portion present in a width of from 0.7 to 1.0 when a distance between Si regular tetrahedrons is 1.0 in this diffraction pattern to inverse Fourier transform is 10 nm or less.

Negative electrode active material for electric device and electric device using the same

A negative electrode active material for electric device is used which includes a silicon-containing alloy having a structure in which a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component and a predetermined composition and in which a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2&#x3b8;=37 to 45&#xb0; to a diffraction peak intensity A of a (111) plane of Si in a range of 2&#x3b8;=24 to 33&#xb0; is 0.41 or more in an X-ray diffraction measurement of the silicon-containing alloy using a CuK&#x3b1;1 ray.

A negative electrode active material which has a ternary alloy composition represented by Si&#x2014;Sn-M (M is one or two or more transition metal elements) and has a microstructure which has a first phase (silicide phase) having a silicide of a transition metal as a main component and a second phase partially containing Sn and having amorphous or low crystalline silicon as a main component, and further has partially a plurality of independent first phases and partially a eutectic structure of the first phase and the second phase is used for an electric device. The negative electrode active material improves cycle durability of an electric device such as a lithium ion secondary battery.

A negative electrode active material for an electric device includes an alloy containing Si in a range of greater than or equal to 27% by mass and less than 100% by mass, Sn in a range of greater than 0% by mass and less than or equal to 73% by mass, V in a range of greater than 0% by mass and less than or equal to 73% by mass, and inevitable impurities as a residue. The negative electrode active material can be obtained with, for example, a multi DC magnetron sputtering apparatus by use of Si, Sn, and V as targets. An electric device using the negative electrode active material can achieve long cycle life and ensure a high capacity and cycle durability.

Negative electrode active material for electric device

To provide a means capable of improving the cycle durability of an electric device such as a lithium ion secondary battery. A negative electrode active material containing a silicon-containing alloy having ternary alloy composition represented by Si&#x2014;Sn-M (M is one or two or more transition metal elements) or quaternary alloy composition represented by Si&#x2014;Sn-M-Al (M is one or two or more transition metal elements) and having a structure wherein an a-Si phase containing amorphous or low crystalline silicon containing tin in a silicon crystal structure in form of a solid solution is dispersed in a silicide phase containing a silicide of a transition metal as a main component is used in an electric device. The negative electrode active material improves the cycle durability of an electric device such as a lithium ion secondary battery.

A negative electrode active material includes a silicon-containing alloy having a composition represented by: SiSnMA(A is unavoidable impurities, M is one or more transition metal elements, x, y, z, and a represent values of percent by mass, and 0&#x3c;x&#x3c;100, 0&#x3c;y&#x3c;100, 0&#x3c;z&#x3c;100, and 0&#x2264;a&#x3c;0.5 and x+y+z+a=100). The silicon-containing alloy has a lattice image subjected to Fourier transform processing to obtain a diffraction pattern and a size determined as an average value of maximum five major axis diameters of regions having a periodic array from a Fourier image obtained by subjecting a diffraction ring portion present in a width of from 0.7 to 1.0 when a distance between Si regular tetrahedrons is 1.0 in this diffraction pattern to inverse Fourier transform is 10 nm or less.

A negative electrode active material having high cycle durability contains an alloy represented by the following chemical formula (1):SiSnMA&#x2003;&#x2003;(1)(in the chemical formula (1), M is at least one metal selected from the group consisting of Ti, Zn, C, and combinations thereof, A is unavoidable impurities, x, y, z, and a represent % by mass values, and in that case, 0&#x3c;x&#x3c;100, 0&#x3c;y&#x3c;100, 0&#x3c;z&#x3c;100, 0&#x2264;a&#x3c;0.5, and x+y+z+a=100), in which the half width of the diffraction peak of the (111) surface of Si in the range of 2&#x3b8;=24 to 33&#xb0; by X ray diffraction measurement of the alloy using the CuK&#x3b1; ray is 0.7&#xb0; or more.

Negative electrode active material for electric device and electric device using same

A negative electrode for an electrical device includes: a current collector; and an electrode layer containing a negative electrode active material, an electrically-conductive auxiliary agent and a binder and formed on a surface of the current collector, wherein the negative electrode active material contains an alloy represented by a following formula (1): SiZnMA(in the formula (1) M is at least one metal selected from the group consisting of V, Sn, Al, C and combinations thereof, A is inevitable impurity, and x, y, z and a represent mass percent values and satisfy 0&#x3c;x&#x3c;100, 0&#x3c;y&#x3c;100, 0&#x3c;z&#x3c;100, 0&#x2264;a&#x3c;0.5 and x+y+z+a=100), and elongation (&#x3b4;) of the electrode layer is 1.29&#x3c;&#x3b4;&#x3c;1.70%.

Negative electrode for electrical device, and electrical device using the same

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Yokosuka, Japan

Manabu Watanabe