Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Manabu Usuda

Yoshihisa Kato

Tetsuzo Ueda

Yutaka Hirose

Kazutoshi Onozawa

Mitsuyoshi Mori

Yusuke Sakata

Shigetaka Kasuga

Shinzo Koyama

Kenji Orita

Keisuke Tanaka

Nobukazu Teranishi

Shigeru Saitou

Kazuo Fujiwara

Toshiyuki Takizawa

Masato Kobayashi

Yuki Sugiura

Kentaro Nakanishi

Toshitaka Akahoshi

It is made possible to monitor the periphery of a target object more accurately, using an imaging device that generates distance image data by sub-range analysis. For a target object present across first and second distance zones adjacent to each other, a first position at a near end position of the first distance zone, a second position at a boundary position between the first and second distance zones, and a third position indicating the position at a far end position of the second distance zone are obtained. Location data of the target object is generated based on location information of the second position with respect to a straight line connecting the first position and third position.

Imaging device

A solid-state image sensor includes a pixel array including pixel cells arranged in a matrix. Each of the pixel cells includes an avalanche photodiode, a floating diffusion which accumulates charges, a transfer transistor which connects a cathode of the avalanche photodiode to the floating diffusion, a first reset transistor for resetting charges collected in the cathode of the avalanche photodiode, a second reset transistor for resetting charges accumulated in the floating diffusion, an amplification transistor for converting a charge amount of charges accumulated in the floating diffusion into a voltage, a memory which accumulates charges, and a count transistor which connects the floating diffusion to the memory.

Solid-state image sensor and imaging device

A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p&#x2212; type semiconductor layer having interfaces; an n+ type semiconductor region located inside the p&#x2212; type semiconductor layer and in contact with the interface; an n+ type semiconductor region located inside the p&#x2212; type semiconductor layer and connected to the n+ type semiconductor region; and a p type semiconductor region located between the n+ type semiconductor region and the interface, wherein the n+ type semiconductor region, the n+ type semiconductor region, and the p type semiconductor region each have a higher impurity concentration than the p&#x2212; type semiconductor layer, the avalanche region is a region between the n+ type semiconductor region and the p type semiconductor region inside the p&#x2212; type semiconductor layer, and the n+ type semiconductor region has a smaller area than the n+ type semiconductor region in planar view.

Photodiode, photodiode array, and solid-state imaging device

A solid-state imaging device includes a substrate of P type and a wiring layer. The substrate includes: a first semiconductor region disposed on a first principle surface and extending in a direction from the first principal surface toward the second principal surface; a second semiconductor region disposed between the second principal surface and the first semiconductor region and connected to the first semiconductor region; a P type semiconductor region disposed between the second principal surface and the second semiconductor regions of two pixels; and a pixel isolation region disposed inside the substrate, between the first semiconductor regions of the two pixels. The second semiconductor region and the P type semiconductor region form an avalanche multiplication region.

Solid-state imaging device

A light receiving device includes: a photoelectric converter including a photodiode and a first pixel electrode disposed on a lower surface of the photodiode; a scanning circuit connected to the first pixel electrode; an electrode pad disposed on a periphery of the scanning circuit; a transparent conductive film extending from an upper surface of the photodiode to the electrode pad, the transparent conductive film having an inclination relative to the upper surface of the photodiode, between the photodiode and the electrode pad; and a sealing resin filled in a space between the photoelectric converter and the scanning circuit, and in a space under the transparent conductive film around the photoelectric converter.

Light receiving device

A 3D imaging apparatus includes: a first image capturing camera generating a base image to be used for obtaining a first range image showing a three-dimensional character of an object; a second image capturing camera generating a reference image to be used for obtaining the first range image; a stereo matching unit searching for corresponding pixels between the base image and the reference image, and generating a first range image by calculating a disparity between the corresponding pixels; and a light source emitting to the object infrared light whose intensity is modulated. The first image capturing camera further generates a second range image by receiving a reflected light in synchronization with the modulated intensity. The reflected light is the infrared light reflected off the object. The second range image includes range information on a range between a point of reflection off the object and the first imaging unit.

3D imaging apparatus

A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.

Semiconductor photodetector

A solid-state imaging device includes: unit pixels each having a light-receiving element which is divided into line widths shorter than or equal to a wavelength of light; a plurality of light-transmissive films in a concentric structure; and an effective refractive index distribution. Among the light-transmissive films, a light-transmissive film closest to a center of the concentric structure has an outer edge in a shape of a true circle, and a light-transmissive film far from the center of the concentric structure has an outer edge in a shape of an oval, a ratio of a long axis to a short axis of the oval increases as the light-transmissive film is farther away from the center of the concentric structure, and a direction of the long axis of the oval is orthogonal to a vector which connects the center of the concentric structure and a center of the solid-state imaging device.

Solid-state imaging device and imaging apparatus

A nitride semiconductor light-emitting device includes a substrate () made of silicon, a mask film () made of silicon oxide, formed on a principal surface of the substrate (), and having at least one opening (), a seed layer () made of GaN selectively formed on the substrate () in the opening (), an LEG layer () formed on a side surface of the seed layer (), and an n-type GaN layer (), an active layer (), and a p-type GaN layer () which are formed on the LEG layer (). The LEG layer () is formed by crystal growth using an organic nitrogen material as a nitrogen source.

Nitride semiconductor light-emitting device

A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the single crystal film, a semiconductor laminated body including a light emitting layer of nitride semiconductor is formed.

Growing community of inventors

Hyogo, Japan

Manabu Usuda