Ebara Corporation

Kabushiki Kaisha Toshiba

Other

Takeda Chemical Industries, Inc.

Toshiba Corporation

Manabu Tsujimura

Katsuya Okumura

Norio Kimura

Hiromi Yajima

Hiroaki Inoue

Seiji Ishikawa

Tetsuji Togawa

Kunihiko Sakurai

Riichirou Aoki

Seiji Katsuoka

Hirokazu Ezawa

Naoaki Ogure

Toyomi Nishi

Masahiro Miyata

Shoichi Kodama

Riichiro Aoki

Yukio Imoto

Gisuke Kouno

Kazuaki Himukai

Kenji Nakamura

Hirokuni Hiyama

Atsushi Shigeta

Minoru Harada

Rempei Nakata

Fumio Kuriyama

Naruhiko Kaji

Ryoichi Shinjo

Akira Fukuda

Shiro Mishima

Hiroyuki Osawa

Harumitsu Saito

Masako Watase

Yukio Ikeda

Hisanori Matsuo

Kazuto Hirokawa

Kunihiro Miyazaki

Hideo Aizawa

Kenji Kamimura

Yoshihiro Mochizuki

Makoto Akagi

Katsuhiko Tokushige

Yutaka Nakano

Satoshi Okamura

Kenichi Suzuki

Koji Mishima

Hisashi Kaneko

Nobuo Hayasaka

Tetsuo Matsuda

Junji Kunisawa

Akihisa Hongo

Tadakazu Sone

Masayoshi Hirose

Hiroshi Sobukawa

You Ishii

Natsuki Makino

Atsushi Chono

Toshiyuki Morita

Moriji Matsumoto

Yukio Murai

Mitsuko Odagaki

Takeyuki Ohdaira

Koji Ono

Haruo Okano

Hozumi Yasuda

Yutaka Wada

Tamami Takahashi

Yuuichi Mikata

Akira Fukunaga

Katsunori Ichiki

Soichi Isobe

Takanobu Nishimura

Shunichiro Kojima

Toshiro Maekawa

Takuji Hayama

Kiyotaka Kawashima

Takayoshi Kawamoto

Akio Shibata

Akiko Miya

Ohsato, Masaaki

Yoshio Ando

Takeyuki Odaira

Toru Matanabe

Tomoyuki Morita

Motohiko Nomi

Shunsuke Shimizu

A method can effectively eliminate a surface level difference (irregularities) in a film formed on an object without producing scratches in a surface of the film, and can polish and remove the film into a flat surface with greatly increased productivity. The method comprises carrying out a first polishing step by pressing a polishing pad of a polishing device, having a diameter which is smaller than the radius of the object, against the surface of the object at a first pressure while moving the polishing pad and the object relative to each other at a first relative speed. The first polishing step is terminated at a point in time when a surface level difference in the object is eliminated to a targeted level. The method further comprises carrying out a second polishing step by pressing a polishing pad of a polishing device, having a diameter which is larger than the diameter of the object, against the surface of the object at a second pressure while moving the polishing pad and the object relative to each other at a second relative speed.

Method and apparatus for polishing object

The present invention relates to a microchip apparatus using liquids. More specifically, the invention provides a liquid mixing apparatus comprising at least two microchannels for introducing liquids and a mixing microchannel that connects to the at least two liquid-introducing microchannels, wherein the liquids are transported from the respective liquid-introducing microchannels toward the mixing microchannel, the apparatus further comprising means for enhancing the mixing of the liquids that converge in the mixing microchannel. The invention also provides an electrophoretic apparatus and a microchip electrophoretic apparatus for denaturing gradient gel electrophoresis.

Microfluidic treatment method and device

A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portionhorizontally holding and rotating a substrate with its surface to be plated facing upward. A seal materialcontacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrodepasses an electric current upon contact with the substrate. A cathode portionrotates integrally with the substrate holding portionAn electrode arm portionis above the cathode portionand movable horizontally and vertically and has an anodeface-down. Plating liquid is poured into a space between the surface to be plated and the anodebrought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Method of performing electrolytic treatment on a conductive layer of a substrate

A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

Method for estimating polishing profile or polishing amount, polishing method and polishing apparatus

The present invention relates to a polishing apparatus for polishing a workpiece, such as a semiconductor wafer, to a flat mirror finish. The polishing apparatus comprises a polishing table having a polishing surface, and a top ring, and the workpiece is interposed between the polishing table and the top ring and pressed at a predetermined pressure to polish the workpiece. The polishing apparatus comprises at least two dressing units for dressing the polishing surface by being brought into contact with the polishing surface, which is a surface of a polishing cloth.

Polishing apparatus

A polishing apparatus for polishing a surface of a workpiece includes a housing unit, a partition wall partitioning an interior of the housing unit into a first chamber and a second chamber, a polishing section disposed in the first chamber and having a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring positioned above the turntable for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, and a cleaning section disposed in the second chamber and cleaning the workpiece which has been polished. The polishing apparatus further includes a transferring device for transferring the workpiece which has been polished from the polishing section to the cleaning section through an opening and an exhaust system for exhausting ambient air from each of the polishing section and cleaning section separately and independently.

This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Polishing apparatus and a method of polishing and cleaning and drying a wafer

A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least including one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device

A workpiece such as a semiconductor wafer is supported on a top ring and polished by an abrasive cloth on a turntable while the top ring is being pressed against the turntable and the turntable and the top ring are being rotated. The top ring is coupled to a top ring drive shaft, coupled to a pressure cylinder for pressing the top ring, and to a motor for rotating the top ring. A spherical bearing is interposed between the top ring and the top ring drive shaft for allowing the top ring to align with the upper surface of the moving turntable. A torque transmitting mechanism is operatively coupled between the top ring and the top ring drive shaft for rotating the top ring in synchronization with the top ring drive shaft.

The present invention relates to a polishing apparatus for polishing a workpiece, such as a semiconductor wafer, to a flat mirror finish. The polishing apparatus comprises a polishing table having a polishing surface, and a top ring, and the workpiece is interposed between the polishing table and the top ring, and pressed at a predetermined pressure to polish the workpiece. The polishing apparatus comprises at least two dressing units for dressing the polishing surface by being brought into contact with the ppolishing surface, which is a surface of a polishing cloth.

There is provided an electroless Ni&#x2014;B plating liquid for forming, a Ni&#x2014;B alloy film on at least part of the interconnects of an electronic device having an embedded interconnect structure, the electroless Ni&#x2014;B plating liquid comprising nickel ions, a complexing agent for nickel ions, a reducing agent for nickel ions, and ammonums (NH). The electroless Ni&#x2014;B plating liquid can lower the boron content of the resulting plated film without increasing the plating rate and form a Ni&#x2014;B alloy film having an FCC crystalline structure.

Electroless Ni-B plating liquid, electronic device and method for manufacturing the same

Growing community of inventors

Tokyo, Japan

Manabu Tsujimura