Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Kioxia Corporation

Manabu Takakuwa

Nobuhiro Komine

Yosuke Okamoto

Kentaro Kasa

Kazuhiro Segawa

Kazuya Fukuhara

Satoshi Usui

Masato Suzuki

Kenji Konomi

Hidenori Sato

Hayato Terai

Tetsuro Nakasugi

Ikuo Yoneda

Hiroshi Nomura

Ryoichi Inanami

Tatsuhiko Higashiki

Hiroshi Koizumi

Takuya Kono

Tetsuya Kugimiya

Yoshihisa Kawamura

Takaki Hashimoto

Kazuto Matsuki

Kazutaka Ishigo

Masaki Hirano

Keita Asanuma

Kiminori Yoshino

Yoshinori Hagio

Hiroyuki Tanizaki

Yoshio Mizuta

Miki Toshima

Yuu Yamayose

Minoru Inomoto

Taketo Kuriyama

Motohiro Okada

Hiroaki Shirakawa

Soichi Inoue

Masamichi Kishimoto

Shinichi Nakagawa

Yuki Murasaka

Takashi Koike

Satoshi Nagai

Kaori Fumita

A measuring device includes a light source that irradiates a measurement spot on a wafer formed with memory holes and slits with a multi-wavelength light, a first imaging unit that acquires a first pupil plane intensity distribution image of reflected light from the measurement spot, a second imaging unit that acquires a second pupil plane intensity distribution image of the reflected light, and a detection unit that analyzes the second pupil plane intensity distribution image to measure overlay. The measuring device includes an overlay analysis unit that acquires the first and second pupil plane intensity distribution images while moving a position of the measurement spot and selects a measurement spot not including the slit based on the first pupil plane intensity distribution image, and uses the overlay obtained by analyzing the second pupil plane intensity distribution image of the selected measurement spot as the overlay of the memory hole and a slit.

Measuring device and measuring method

A semiconductor wafer according to an embodiment includes a support region facing a support member, an outer circumferential region positioned on an outer side of the support region, and an inner circumferential region positioned on an inner side of the support region. The outer circumferential region has a convex portion with a thickness protruded upward with respect to the inner circumferential region or a concave portion with a thickness recessed downward with respect to the inner circumferential region.

Semiconductor wafer, manufacturing method for semiconductor wafer, and manufacturing method for semiconductor device

According to one embodiment, there is provided a semiconductor manufacturing apparatus including a rotatable substrate stage, a first measuring mechanism and a second measuring mechanism. On the rotatable substrate stage, a laminated substrate used for manufacturing a semiconductor device is placed. The laminated substrate is formed by a first substrate and a second substrate to be laminated to each other. The first measuring mechanism measures an edge of the first substrate and an edge of the second substrate from a first direction. The second measuring mechanism measures the edge of the first substrate and the edge of the second substrate from a second direction. The second direction is a direction different from the first direction in an angle to a normal of the first substrate.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

According to one embodiment, a position measuring apparatus includes a substrate holding part, a projection part, a liquid supply part, an imaging part, a position measuring part, and a control unit. The substrate holding part is configured to hold a substrate including at least part of a circuit pattern. The projection part is configured to irradiate the substrate held on the substrate holding part with illumination light, and to transmit reflected light from the substrate, of the illumination light radiated on the substrate. The liquid supply part is configured to supply a liquid into a space between the substrate held on the substrate holding part and the projection part. The imaging part is configured to receive the reflected light transmitted through the projection part, and to generate an image signal based on the reflected light. The position measuring part is configured to obtain positional information on a position of the substrate holding part. The control unit is configured to determine a coordinate position of the at least part of a circuit pattern in the substrate, on a basis of the positional information and the image signal.

Position measuring apparatus and measuring method

An exposure method includes acquiring first height information through detection of a height of an upper surface of a substrate subjected to exposure; acquiring first position information through detection of a relative position between the substrate and a first mask having a first pattern to be transferred on the substrate; converting the first height information to second position information; acquiring second height information through detection of a height of the upper surface of the substrate; acquiring third position information through detection of a relative position between the substrate and a second mask having a second pattern to be transferred on the substrate; converting the second height information to fourth position information; calculating differential position information, based on difference between the second position information and the fourth position information; and aligning the second mask and the substrate, based on the third position information and the differential position information.

Exposure method, exposure apparatus, and semiconductor device manufacturing method

According to one embodiment, there is provided a substrate bonding apparatus including a first suction stage, a second suction stage, and a pressing member. The first suction stage sucks a first substrate. The second suction stage is arranged so as to face the first substrate. The second suction stage sucks the second substrate. The pressing member is capable of deforming the first substrate sucked on the first suction stage so as to be convex toward the second suction stage side. The pressing member has a marking structure on a distal end side.

Substrate bonding apparatus

According to the embodiments, a template in which a main pattern is placed on a pattern-formed surface of a template substrate, the main pattern being formed by a concave and convex pattern, the template substrate being transparent to an electromagnetic wave with a predetermined wavelength is provided. The template includes a first mark in which line-shaped first concave patterns and first convex patterns are alternately placed in a width direction on the pattern-formed surface. The first convex pattern includes a first light-blocking portion and a first translucent portion. The first light-blocking portion is a region including a first side surface in the width direction and being covered with a metal film. The first translucent portion is a region including a second side surface in the width direction and being not covered with the metal film.

Template, imprint apparatus, imprint method and imprint apparatus management method

According to one embodiment, there is provided an exposure apparatus which projects a pattern of an original onto a substrate by a projection optical system so as to expose the substrate. The exposure apparatus includes a substrate stage, an alignment detecting system, and a controller. The substrate stage holds the substrate on which shot areas each including multiple chip areas are placed. The alignment detecting system detects multiple first alignment marks placed in a peripheral region in a first chip area in the shot area. The controller obtains the first amount of positional deviation for the first chip area according to results of detecting the multiple first alignment marks and controls exposure conditions for the first chip area in the shot area according to the first amount of positional deviation.

Exposure apparatus, exposure method, and semiconductor device manufacturing method

According to one embodiment, a patterning support system includes an absolute position measuring device that measures absolute positions with respect to absolute coordinates, of a first pattern formed in a shot area of a substrate and a second pattern to be transferred to the substrate while being overlayed on the first pattern, a substrate profile measuring device that measures a global positional deviation amount of the substrate, a misalignment inspecting device that measures a misalignment amount of the second pattern with respect to the first pattern, a correction executing device that corrects the position of the second pattern with respect to the first pattern, and a control device that calibrates the absolute positions measured by the absolute position measuring device, using at least one of the global positional deviation amount and the misalignment amount, and converts the calibrated absolute positions into a position correction parameter to be used when the position of the second pattern is corrected by the correction executing device.

Patterning support system, patterning method, and nonvolatile recording medium

According to one embodiment, a value of a film thickness of a processing object disposed above a substrate is obtained. Then, a wavelength that provides a highest degree of intensity of signal light reflected when the signal light is incident onto the processing object having the value of the film thickness, based on wavelength selection reference information is selected. Then, a first instruction performing an alignment process to the substrate by use of signal light having a wavelength thus selected is generated. The wavelength selection reference information is information that includes a correlation between values of the film thickness of the processing object and degrees of intensity of the signal light, with respect to a plurality of wavelengths.

Substrate measurement system, method of measuring substrate, and computer program product

According to one embodiment, an alignment method includes calculating a position gap of a predetermined point in a device area of a wafer based on a stress applied to the device area, and correcting an exposure condition in a lithography process of the device area based on the position gap of the predetermined point.

Alignment method, pattern formation system, and exposure device

According to one embodiment, there is provided a measurement method. The method includes acquiring layer information related to a plurality of layers to be superimposed for each of a plurality of shot regions on a substrate. The method includes dividing the plurality of shot regions into a plurality of groups corresponding to a layer attribute based on the acquired layer information. The method includes deciding a measurement condition of a measuring apparatus for each of the plurality of groups. The plurality of layers are sequentially stacked on the substrate to manufacture a semiconductor device.

Measurement method, measurement program, and measurement system

According to one embodiment, an imprint apparatus including multiple types of imprint units and a conveyor to convey a substrate is provided. Each of the imprint units includes a suction mechanism configured to hold the substrate with multiple suction portions on a substrate holder, and a template having an imprint surface on which a concavo-convex pattern is formed on one face of a template substrate and having a recessed region in the other face, the recessed region corresponding to the imprint surface. The imprint units have different depths of the recessed regions in the templates and different arrangements of the suction portions in the suction mechanisms depending on the types.

Imprint apparatus and imprint method

In an imprinting apparatus according to one embodiment, rear surfaces of first and second templates are suctioned. A correction information calculating device calculates a second response coefficient of the second template out of first response coefficients based on a flatness relational expression and flatness of the second template. The first response coefficients are actual amounts of positional slippage of the first template from a first input adjustment value. The flatness relational expression indicates a relationship between flatness of the first template and the first response coefficients. A shape and a size of the second template are adjusted using the second response coefficient.

Imprinting apparatus and imprinting method

Growing community of inventors

Tsu, Japan

Manabu Takakuwa