Jsr Corporation

Asahi Kasei Kabushiki Kaisha

Asahi Kasei Battery Separator Corporation

Manabu Sekiguchi

Kinji Yamada

Atsushi Shiota

Michinori Nishikawa

Naoki Sugiyama

Hozumi Sato

Terukazu Kokubo

Akihisa Yamashita

Yuki Fukunaga

Matthias Patz

Takahiko Kurosawa

Tatsuya Yamanaka

Masahiro Akiyama

Tsuyoshi Furukawa

Mutsuhiko Yoshioka

Masaki Obi

Seitaro Hattori

Taichi Matsumoto

Masaki Katayama

Michihiro Mita

Keita Dohki

Seitarou Hattori

Ryoma Kawaguchi

Masaaki Kanao

Kentaro Tamaki

Chiaki Miyamoto

Provided is a polyolefin microporous membrane containing polyethylene, wherein the melting peak of nonrev. heat flow measured by a temperature-modulated DSC method at a temperature rise rate of 1° C./min of the polyolefin microporous membrane is within the range of 141.0° C. to 150.0° C.

Polyolefin microporous membrane

Provided is a polyolefin microporous membrane having a loss tangent (tan δ) at 230° C. of 0.35 or more and less than 0.60 in melt viscoelasticity measurement.

A polyolefin microporous film having a laminated structure provided with at least one layer A containing a polyolefin and at least one layer B containing a polyolefin. 0 mass % to less than 3 mass % of polypropylene is contained in layer A and 1 mass % to less than 30 mass % of polypropylene is contained in layer B. When the proportion of polypropylene contained in layer A is represented by PPA (mass %) and the proportion of polypropylene contained in layer B is represented by PPB (mass %), PPB&#x3e;PPA. In the polyolefin microporous film, the heat shrinkage ratio in TD at 120&#xb0; C. measured upon applying, in MD, a constant load determined on the basis of the relationship: load (gf)=0.01&#xd7;piercing strength (gf) of polyolefin microporous film&#xd7;length (mm) in TD of polyolefin microporous film, is 10 to 40% inclusive.

Polyolefin microporous film and lithium-ion secondary cell in which same is used

According to the present invention, a microporous membrane contains a polyolefin resin and inorganic particles; the primary particle diameter of the inorganic particles is 100 nm or less; the content of the inorganic particles is 10-60% by mass or 10% by mass or more but less than 40% by mass based on the mass of the microporous membrane; and the retention time at 150&#xb0; C. is less than 200 seconds or the retention time at 145&#xb0; C. is more than 1 second but less than 300 seconds in the thermal behavior evaluation of the microporous membrane.

Polyolefin microporous membrane, separator for electricity storage devices, and electricity storage device

A microporous membrane according to the present invention is a microporous membrane containing a copolymerized high density polyethylene and a high density polyethylene, wherein a content of an &#x3b1;-olefin unit having 3 or more carbon atoms in the microporous membrane is 0.01 mol % or more and 0.6 mol % or less, and a viscosity average molecular weight of the microporous membrane is less than 300,000. In addition, a battery separator according to the present invention contains the above microporous membrane. Further, a battery according to the present invention contains the above battery separator.

Microporous Membrane, Battery Separator, and Battery

A method of forming a trench isolation, comprising the steps of:

Method of forming a trench isolation

A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

Laminate and method of forming the same, insulating film, and semiconductor device

An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising: (A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and (B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.

Method of film formation, insulating film, and substrate for semiconductor

A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.

Stacked film, insulating film and substrate for semiconductor

A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.

Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor

Oxetane compound, oxetane copolymer, and process for producing the oxetane compound

Disclosed is a photo-curable composition comprising the following components (A) to (C): (A) hydrolyzable silane compound represented by the general formula (1) or a hydrolyzate thereof: (R,),Si(X),(1) wherein R,is a non-hydrolyzable organic group having 1 to 12 carbon atoms, X is a hydrolyzable group, and p is an integer of 0 to 3; (B) photo acid generator; and (C) dehydrating agent. By such constitution, it is possible to provide a photo-curable composition which has a rapid photo-curable rate, is excellent in characteristics such as storage stability, heat resistance, weather-ability, scratch resistance and the like, and is applicable to base materials having low heat resistance such as plastics, as well as a cured product obtained therefrom.

Growing community of inventors

Tokyo, Japan

Manabu Sekiguchi