Sumitomo Electric Industries, Limited

Manabu Okui

Koji Uematsu

Masaki Ueno

Hideaki Nakahata

Shinsuke Fujiwara

Takuji Okahisa

Ryu Hirota

Hideki Kashihara

Munetsugu Ueyama

Tomoki Uemura

Masaya Nishi

Shin Hashimoto

Ryusuke Nakai

Fumio Matsuyama

Toshiyuki Hatta

Kenichiro Shibata

Muneyuki Nishioka

Masahiro Miyamoto

A filter disposed as a cylinder around an axis line, and provided to be rotatable around the axis line, a treated water nozzle for emitting treated water toward an outer circumferential surface of the filter, a case provided to surround the filter, and including an outer cylindrical portion having a nozzle opening of the treated water nozzle therein, a filtered water flow path for guiding filtered water that has been transmitted through the filter to outside of the case from within the cylinder of the filter, and a discharge flow path for discharging discharged water that was not filtered through the filter to the outside of the case are provided.

Device and method for treating ballast water for ship

An AlGaInN crystal substrate of the present invention has a main plane having an area of at least 10 cm. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1&#xd7;10cmand at most 1&#xd7;10cm. It is thereby possible to provide an AlGaInN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlGaInN crystal substrate, and a method of manufacturing the same.

[object Object]

Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhanced brightness. Semiconductor light-emitting device () is furnished with an n-type cladding layer (), a p-type cladding layer () provided over the n-type cladding layer (), and an active layer () composed of a nitride and provided in between the n-type cladding layer () and the p-type cladding layer (), and therein is characterized in that the angle formed by an axis orthogonal to the interface between the n-type cladding layer () and the active layer (), and the c-axis in the active layer (), and the angle formed by an axis orthogonal to the interface between the active layer () and the p-type cladding layer (), and the c-axis in the active layer (), are each greater than zero.

Semiconductor light-emitting device

A composite material comprising a magnetic metal plate and an aluminum or aluminum alloy plate, the magnetic metal plate and the aluminum or aluminum alloy plate being clad together by an axial hot pressing. A process for producing a composite material which comprises the step of: cladding a magnetic metal plate with an aluminum or aluminum alloy plate by an axial hot pressing. A process for producing a composite material molding which comprises the steps of: cladding a magnetic metal plate with an aluminum or aluminum alloy plate by an axial hot pressing thereby obtaining a composite plate material; and subsequently subjecting the composite plate material to press molding and/or stamping and cutting.

Composite material, process for producing composite material, and

Growing community of inventors

Itami, Japan

Manabu Okui