Fujitsu Corporation

Fujitsu Vlsi Limited

Manabu Ohno

Akio Yamada

Hitoshi Watanabe

Kiichi Sakamoto

Katsuhiko Kobayashi

Kenichi Kawakami

Satoru Yamazaki

Satoru Sagou

Hiroshi Yasuda

Yasushi Takahashi

Takashi Maruyama

Yoshihisa Oae

Kenichi Miyazawa

Tomohiko Abe

Junichi Kai

Takamasa Satoh

Soichiro Arai

A method of generation of exposure data for charged particle beam exposure using a block mask, in which a first transmission beam is formed by transmission of a charged particle beam through a rectangular first transmission aperture; a second transmission beam is formed by causing the first transmission beam to be transmitted through a block mask having a plurality of discrete patterns; and the second transmission beam irradiates an object for exposure. This exposure data generation method has a step of generating irradiation position data of the first transmission beam on the block mask, such that the Y-direction or X-direction edge of the first transmission beam is positioned in a common isolated area in the X direction or Y direction of the plurality of discrete patterns in the block mask.

Method of generation of charged particle beam exposure data and charged particle beam exposure method using a block mask

A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

Charged-particle-beam exposure device and charged-particle-beam exposure method

Charged particle-beam exposure device and charged-particle-beam exposure

By using a blanking aperture array BAA, the density of the bit map data in the portions where adjacent areas are linked is decreased toward the outside. On the lower surface of the holder of the BAA chip, a ball grid array wired to blanking electrodes is formed, to be pressed in contact against pads on a wiring base board. The registered bit map data for an isosceles right triangle are read out from address A=A0+�RA.multidot.i! (A0 and i are integers, � ! is an operator for integerizing), masked, and then shifted by bits to be deformed. From registered bit map data for proximity effect correction, the area which corresponds to the size of the object of correction and the required degree of proximity affect correction is extracted, and logic operation with the bit map data of the object of correction is performed to achieve proximity affect correction. Before figures data are expanded into bit map, a checksum is determined in units of bit map data corresponding to the range of one session of scanning over which continuous exposure is possible. A sine wave voltage is provided to an electrostatic deflector and during a one-shot exposure period, an electron beam is caused to scan for an integer number of times on a block of a mask and the positional misalignment of the electron beam at the lower aperture stop is corrected.

Method of and system for exposing pattern on object by charged particle

Method of detecting a deficiency in a charged-particle-beam exposure mask

A charged particle beam exposure system checks for the shape of the charged particle beam shaped by a mask by causing a scanning of a marker pattern provided on a substrate along a scanning path. The reflected electrons emitted from the substrate are detected, and the shape of the charged particle beam is obtained based upon the profile of the reflected electrons along the scanning path. By comparing expected pattern of the reflected charged particles, one can detect anomaly in the beam shaping aperture on the mask, wherein the step for comparing the observed pattern and the expected pattern includes a step of pattern matching for shifting the patterns with each other for seeking a minimum of unoverlapped area of the patterns. When the difference between the observed pattern and the expected pattern exceeds a threshold in the state that the unoverlapped area is minimized, an alarm produced with the information indicative of the location of the pattern wherein the threshold has been exceeded.

Charged particle exposure system having a capability of checking the

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Kawasaki, Japan

Manabu Ohno