Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Manabu Niboshi

Yuto Tsukamoto

Shinichi Kawato

Katsuhiro Kikuchi

Satoshi Inoue

Yoshiyuki Isomura

Hideki Uchida

Asae Ito

Tokiyoshi Umeda

Takashi Ochi

Hisao Ikeda

Yuhki Kobayashi

Tomohiro Kosaka

Eiji Koike

Hiroshi Imada

Bai Zhang

Tomofumi Osaki

Tomoaki Jo

Seiichi Mitsui

Ayataka Endo

Yoshitaka Yamamoto

Kohei Yokoyama

Youhei Nakanishi

Yoshitaka Dozen

Masanori Ohara

Nozomu Sugisawa

Takuya Kawata

Masayuki Kanehiro

Hisayuki Utsumi

Naoyuki Senda

Shota Okamoto

Kazuo Takizawa

Satoshi Seo

Yoshiharu Hirakata

Fumikazu Shimoshikiryoh

Tsuyoshi Inoue

Kaoru Hatano

Takeshi Hirase

Koji Yamabuchi

Eiichi Matsumoto

Masahiro Ichihara

Kaoru Abe

Shinji Nakajima

Hiroyuki Shimoyama

Katsunori Mitsuhashi

A display device includes a light-emitting element layer including light-emitting elements in a plurality of kinds each emitting a light in a different color. A first electrode of the light-emitting elements includes a plurality of reflective layers including one RM and one TE stacked on the RM. The plurality of the reflective layers are stacked so that the RM and the TE are alternatively arranged in the stated order.

Display device

A display device includes a light-emitting element layer including a plurality of light-emitting elements in each of which a first electrode, a function layer including a light-emitting layer, and a second electrode are disposed in this order from a thin film transistor layer side, and the first electrode includes a first transparent electrode, a reflective metal layer, and a semi-transparent metal layer in this order from the side opposite to the light-emitting layer.

A display device includes a TFT layer, a light-emitting element layer provided in an upper layer than the TFT layer and including a first electrode, a second electrode, and a light-emitting layer of visible light, and a sealing layer covering the light-emitting element layer. An infrared light emission layer and an infrared light detection element are provided in a lower layer than the sealing layer.

To provide a light-emitting device that can obtain fluorescence having a narrow spectrum more efficiently, a light-emitting device includes: a light-emitting layer in which thermally activated delayed fluorescence bodies and quantum dots are dispersed; a first electrode in a lower layer than the light-emitting layer; and a second electrode in an upper layer than the light-emitting layer, wherein a light emission spectrum of the thermally activated delayed fluorescence bodies and an absorption spectrum of the quantum dots at least partially overlap each other.

Light-emitting device including light-emitting layer in which thermally activated delayed fluorescence bodies and quantum dots are dispersed and manufacturing apparatus of light-emitting device

An organic EL display device includes a light modulating unit layer, a TFT layer, and a plurality of organic EL elements layered in the stated order. A top-emitting single-sided display emitting light emitted from a light emitting layer from an upper electrode side and a double-sided display emitting light emitted from the light emitting layer from each of the upper electrode side and a lower electrode side are electrically switched.

Display device configured to switch between single-sided and double-sided display

To provide a light-emitting device for achieving fluorescence emission with higher efficiency and longer life, a light-emitting device includes an exciton generation layer in which quantum dots are dispersed, a light-emitting layer in which light emitters, which are phosphors or phosphorescent members, are dispersed, the light-emitting layer adjoining the exciton generation layer in a vertical direction, a first electrode located on a lower side of the exciton generation layer and the light-emitting layer, and a second electrode located on an upper side of the exciton generation layer and the light-emitting layer, and the light emission spectrum of the quantum dots and the absorption spectrum of the light emitters at least partially overlap.

Light-emitting device

An organic EL display device includes a blue pixel, and a second pixel configured to output light having a peak wavelength longer than that of blue light. The blue pixel includes a blue phosphorescent luminescent material containing layer and a blue fluorescent luminescent material containing layer as common layers common to the plurality of pixels, and the second pixel includes a second phosphorescent luminescent material containing layer provided in each of the second pixel, adjacently to the common layers at the side of an anode from the common layers.

Organic EL display device, manufacturing method thereof, and light-emission method thereof

An organic EL display device with higher resolution, suppressed power consumption while being driven and low manufacturing cost, and no color mixing and color shifting between subpixels adjacent to each other is provided. In a B subpixel, a first separation layer is provided between a common blue-light-emitting layer and a common green-light-emitting layer. In a G subpixel, a second separation layer is provided between the common green-light-emitting layer and a common red-light-emitting layer.

Organic EL display device and organic EL display device manufacturing method

Provided is a display apparatus where: a blue light-emitting layer is formed as a layer that is common to a first subpixel, a second subpixel, and a third subpixel; a green light-emitting layer is formed as a layer that is common to the second subpixel and the third subpixel; and the red light-emitting layer is formed only in the third subpixel.

Display apparatus and method for manufacturing same

To provide a vapor deposition source of which material usage efficiency is higher as compared with the related art. A vapor deposition source () includes a vapor deposition particles ejecting unit () configured to include multistage of nozzle units layered apart from each other in a vertical direction, each of the nozzle units including at least one vapor deposition nozzle (), and at least one space part () provided between the multistage of vapor deposition nozzles, and a vacuum exhaust unit () connected with the at least one space part ().

Vapor deposition source and vapor deposition device for producing vapor deposition film with high material usage efficiency

A vapor deposition mask including a metallic substrate provided with a plurality of openings for passing vapor deposition particles, wherein at least a portion of the plurality of openings are structured by one or more opening groups in which the plurality of openings are repeatedly arranged in accordance with a constant rule, and a plurality of protrusions of identical height are arranged to support the entire substrate from one side, and are provided only outside the opening group formation region.

Vapor deposition mask and manufacturing method for organic EL display device

Provided is an EL element utilizing upconversion light emission involving highly efficient triplet-triplet annihilation. A blue-light-emitting layer includes an ionic liquid, a red phosphorescent material, and a blue fluorescent material. The blue fluorescent material and the red phosphorescent material are homogeneously dispersed in a liquid film of the ionic liquid.

EL element and method for manufacturing EL element with a light-emitting layer including an ionic liquid, a phosphorescent material, and a fluorescent material

An organic EL element () includes a first light-emitting layer () having the shortest emission peak wavelength of a light-emitting layer () and containing a host material and a TTF material or at least the TTF material, a second light-emitting layer () containing at least a TADF material, a third light-emitting layer () having the longest emission peak wavelength of the light-emitting layer () and containing at least fluorescent material. The excited triplet level of the TTF material is lower than the excited triplet level of the TADF material.

Light-emitting element, display device, method for manufacturing light-emitting element, and light emission method

Provided is a display apparatus where: a red light-emitting layer is formed as a layer that is common to a first subpixel, a second subpixel, and a third subpixel; a blue light-emitting layer is formed as a layer that is common to the first subpixel and the second subpixel; and the green light-emitting layer is formed only in the second subpixel.

Provided is a line source that can achieve uniform film thickness distribution and also achieve high use efficiency of vapor deposition materials. A line source () has slit nozzles () having a slit nozzle's length-to-width ratio of 4 to 50, a width of 1 mm to 5 mm, and a depth of 5 mm to 20 mm.

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Sakai, Japan

Manabu Niboshi