Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Lintec Corporation

Kyushu University

Manabu Nakata

Shinichi Machida

Masumi Izuchi

Sanshiro Shishido

Takeyoshi Tokuhara

Masaaki Yanagida

Yasunori Inoue

Masaya Hirade

Masashi Murakami

Yuko Kishimoto

Katsuya Nozawa

Katsuyuki Shizu

Hironori Kaji

Katsuaki Suzuki

Chihaya Adachi

Yasuhisa Inada

Taku Hirasawa

Masahito Yamana

Hiroaki Iijima

Yasukazu Nakata

Toshihiro Higuchi

Taniyuki Furuyama

A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

Photoelectric conversion element including first electrode, second electrodes, photoelectric conversion film, and conductive layer and method for manufacturing the same

An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Imaging apparatus including unit pixel, counter electrode, photoelectric conversion layer, and voltage supply circuit

An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.

Imaging device including at least one unit pixel cell and voltage application circuit

A composition contains a phthalocyanine derivative represented by the following formula: where Rto Rare independently an alkyl group, M is Si, each of Rand Ris any one of substituents represented by the following formulas, Rto Rare independently an alkyl group, and Rto Rare independently an alkyl group or an aryl group: 

Composition, photoelectric conversion element, and imaging device

An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Imaging apparatus including unit pixel, counter electrode, photoelectric conversion layer, and computing circuit

A photoelectric conversion material includes a compound represented by Formula (1): where, X is selected from the group consisting of a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, and a cyano group; and Y represents a monovalent substituent represented by Formula (2): where, Rto Reach independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; or two or more of Rto Rbond to each other to form one or more rings, and the remainders each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; * denotes the binding site of Y in Formula (1); and Aris selected from the group consisting of structures represented by Formulae (3): where ** denotes a binding site of Arwith N in Formula (2).

Photoelectric conversion material containing organic semiconductor material, and photoelectric conversion element

An imaging device includes at least one unit pixel cell including a photoelectric converter that converts incident light into electric charges. The photoelectric converter includes: a first electrode; a light-transmitting second electrode; a first photoelectric conversion layer disposed between the first electrode and the second electrode and containing a first material having an absorption peak at a first wavelength; and a second photoelectric conversion layer disposed between the first photoelectric conversion layer and the second electrode and containing a second material having an absorption peak at a second wavelength different from the first wavelength. The absolute value of the ionization potential of the first material is larger by at least 0.2 eV than the absolute value of the ionization potential of the second material.

Imaging device including a photoelectric converter and a voltage application circuit

A method for controlling an imaging device having a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band, and that allows switching of an operation mode from the first mode to the second mode or from the second mode to the first mode. The method including causing the imaging device to perform imaging in the first mode or the second mode; determining, with a predetermined frequency or in response to a predetermined trigger, whether to maintain a current operation mode or switch the current operation mode on the basis of first image information in the first imaging wavelength band and second image information in the second imaging wavelength band; and in accordance with the determination, selectively maintaining the current operation mode or switching the current operation mode.

Method for controlling imaging device, and imaging device

Imaging device including at least one unit pixel cell

Growing community of inventors

Osaka, Japan

Manabu Nakata