Kyocera Corporation

Manabu Kyuzo

Shinichi Abe

Norihiko Matsushima

Seiji Oguri

Ken Nishiura

Kazumasa Umesato

Hiromitsu Ogawa

Akio Yamamoto

Atsuo Hatate

Aki Kitabayashi

Keizo Takeda

Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Method for producing semiconductor layer, method for producing photoelectric conversion device, and semiconductor starting material

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Higashiomi, Japan

Manabu Kyuzo