Denso Corporation

Manabu Koike

Masahiko Ishii

Takeshi Miyajima

Yutaka Tomatsu

Noriyuki Iwamori

Hirofumi Funahashi

Atsushi Komura

Masaaki Kuroyanagi

Takeshi Kuzuhara

Ryosuke Inoshita

Kenji Nakashima

Jiro Sakata

As a basic managing pattern, each manufacturing lot containing at least one workpiece is designated as a main objective to be managed. An appropriate number of similar type manufacturing lots containing workpieces having the same work conditions in at least one work step are loaded on a carrier. Then, the carrier is transported to a batch apparatus that performs simultaneous processing or machining operation applied to the workpieces or to an apparatus that brings the workpieces into an in-process work step under the same conditions, so as to cause the workpieces contained in respective similar type manufacturing lots to pass along a plurality of manufacturing process flows. Alternatively, an appropriate number of different type manufacturing lots containing workpieces having different work conditions are loaded on a carrier. Then, the carrier is transported to an apparatus that is capable of simultaneously bringing the workpieces into in-process work steps of different conditions, so as to cause the workpieces contained in respective different type manufacturing lots to pass along a plurality of manufacturing process flows.

Manufacturing method for a plurality of manufacturing lots

In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment at a temperature equal to or higher than 950&deg; C. for a specific time period (equal to or longer than 15 minutes). When performing the heat treatment and when raising a temperature up to the heat treatment temperature, oxygen is supplied together with nitrogen gas (inert gas). A supply amount of oxygen is controlled to be equal to or less than 5% when raising the temperature up to the heat treatment temperature, and to be equal to or less than 2% when performing the heat treatment. After the heat treatment, the oxidation film is formed. As a result, crystal defects (OSFs) are prevented from being produced on the silicon substrate surface.

Method of manufacturing semiconductor device

On the surface of a semiconductor substrate there are formed a silicon oxide film, silicon nitride film and resist, whereby a groove is formed in the semiconductor substrate through an opening portion by chemical dry etching. An oxide film is formed on the inner surface of the groove by wet oxidation and, further, this oxide film is removed by wet etching, after which the surface of the semiconductor substrate located on the outer-peripheral side of the groove from an angular portion defined between a side surface of the groove and the surface of the semiconductor substrate is exposed. Then, the inner surface of the groove and the exposed surface of the semiconductor substrate are oxidized to thereby form a LOCOS oxide film, and thereafter this LOCOS oxide film is removed. As a result of this, the angular portion is made round, thereby enabling the avoidance of the concentration of an electric field on the angular portion of the groove.

Manufacturing method of semiconductor device with a groove

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Toyoake, Japan

Manabu Koike