Mitsubishi Denki Kabushiki Kaisha

Manabu Katoh

Teruyuki Shimura

Ryo Hattori

Takeshi Miura

Hiroshi Matsuoka

Norio Hayafuji

Hirotaka Kizuki

Masayuki Sakai

Yuji Ohkura

Kotaro Mitsui

Seiji Ochi

Akihiro Takami

Kazuo Mizuguchi

Mari Tsugami

Zenpei Kawazu

A semiconductor device includes a semiconductor substrate having opposite front and rear surfaces; a semiconductor element disposed on the front surface of the semiconductor substrate and including an electrode; a PHS for dissipating heat generated in the semiconductor element, the PHS including a metal layer and disposed on the rear surface of the semiconductor substrate; a via-hole including a through-hole penetrating through the semiconductor substrate from the front surface to the rear surface and having an inner surface, and a metal disposed in the through-hole and contacting the PHS; and an air-bridge wiring including a metal film and having first and second portions, the air-bridge contacting the electrode of the semiconductor element at the first portion and contacting the metal of the via-hole at the second portion. Therefore, heat produced in the semiconductor element is transferred to the PHS not only through the semiconductor substrate just under the element but also through the air-bridge wiring and the via-hole, whereby the heat dissipating property of the device is significantly improved.

Semiconductor device including plated heat sink and airbridge for heat

An electrode lead of a transistor extends beyond other electrode leads of the transistor, is disposed adjacent to the corresponding electrode, and is disposed outside the other electrode leads for heat radiation. A wider part of the electrode lead may have a via hole or a thick metal plating for heat radiation. Further, the electrode is preferably grounded and is connected to an external input terminal to which heat is transferred.

Hybrid transistor structure with widened leads for reduced thermal

A high power bipolar transistor includes bipolar transistors disposed on a substrate; a signal line including a pad for inputting a driving signal and a signal transmission line continuous with the pad commonly connecting base electrodes of the bipolar transistors; and a bypass line having a first end connected to the signal transmission line proximate to the pad and a second end connected to the signal transmission line remote from the pad. Approximately equal powers are supplied to the transistors connected to any position on the base feed line so that the operation of the respective transistors is uniform, improving output power and efficiency.

High power bipolar transistor device

In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.

Infrared detector having active regions and isolating regions formed of

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Itami, Japan

Manabu Katoh