Minolta Camera Kabushiki Kaisha

Canon Kabushiki Kaisha

Panasonic Corporation

Minolta Company, Ltd.

Matsushita Electric Industrial Co., Ltd.

Other

Minolta Camera Co., Ltd.

Canon Aptex

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Works, Ltd.

Copal Company Limited

Manabu Inoue

Nobuyuki Taniguchi

Yoshiaki Hata

Yoshinobu Kudo

Hiroshi Ueda

Takeo Hoda

Masaaki Nakai

Hiroshi Ootsuka

Akihiko Fujino

Katsuyuki Nanba

Michihiro Iwata

Masahiro Nakanishi

Shigeru Wada

Tetsushi Kasahara

Tomoaki Izumi

Kazuaki Tamura

Hirokazu Yagura

Kiminori Matsuno

Osamu Morita

Sadafusa Tsuji

Yoshihiro Tanaka

Masayuki Toyama

Toshihiko Ishimura

Masaaki Igarashi

Toshimi Chiba

Masanori Takenouchi

Norio Ishikawa

Hiroyuki Okada

Masatake Niwa

Kunio Kawamura

Toru Ishii

Shuji Izumi

Tetsuya Sekine

Reiji Seki

Hitomi Ito

Osamu Sato

Toshiaki Hirosawa

Shinji Inoue

Hideki Nagata

Takuji Maeda

Takehiro Katoh

Minoru Sekida

Masayasu Hirano

Ikushi Nakamura

Tsutomu Honda

Wataru Takahashi

Tsutomu Abe

Masataka Hamada

Yoshiho Gotoh

Yutaka Koizumi

Takuya Ishii

Hiroaki Kubo

Gen Sasaki

Takanobu Omaki

Hiroyuki Matsumoto

Masataka Naito

Shosaku Kawashima

Tadashi Yano

Hisakazu Shimizu

Naoki Kosugi

Masaaki Kuranuki

Toshio Yamaki

Akira Fujii

Katsushige Amano

Yoshinori Tanabe

Hiroyuki Kimura

Takashi Mori

Naoki Tashiro

Toshiyuki Tanaka

Yasuhiro Uemoto

Tatsuo Morita

Manabu Yanagihara

Yutaka Nakamura

Shigemasa Shiota

Hideki Nakata

Yoshihisa Kato

Takeshi Suzuki

Toshiyuki Honda

Hiroyuki Kado

Hidetoshi Ishida

Shinji Tominaga

Shuji Inoue

Masataka Isomoto

Makoto Ochi

Hiroyuki Handa

Atsushi Shiraishi

Yasuaki Akada

Seiji Nakamura

Toshiyuki Aoyama

Hirokazu So

Yosuke Yukawa

Jumpei Hashiguchi

Masatoshi Kamitani

Keiji Akamatsu

Kouichi Kobayashi

Toshio Umino

Akira Fukushima

Hiroki Akashi

Tetsuro Kanbara

Motohiro Nakanishi

An input device which is a capacitive coupling type and can reduce visibility of wiring patterns of electrodes and interference fringes is provided. The input device is included in a display device including a plurality of pixels, and is configured to detect a contact position of a user. The input device includes a plurality of first electrodes, a plurality of second electrodes disposed so as to cross the first electrodes, and a plurality of third electrodes disposed between the second electrodes. Slits extending obliquely with respect to an extension direction of the second electrodes are formed between the third electrodes.

Input device and display device

Camera body

Digital video camera

A structure of a panel which can be thinned down to about a panel thickness of a PDP and a manufacturing method thereof are provided. A gas filling hole is provided to a surface of a rear glass substrate of a PDP, the surface coming in contact with a front glass substrate of the PDP. Vacuuming and filling of a discharge gas are performed through the gas filling hole. After filling of the discharge gas, a mechanism for lifting solder iron up and down and supplying solder provided inside a chamber inserts a tip of an ultrasonic soldering iron into the gas filling hole to start supplying a solder which is a material for a plug sealant. When a series of forming steps of the plug sealant are finished, the ultrasonic soldering iron is retreated before the solder is solidified to finish formation of the plug sealant.

Plasma display panel and chamber for manufacturing plasma display panel

In a storage having a nonvolatile RAM of destructive read type, the number of restorations attributed to data read from the nonvolatile RAM is decreased, and the overall life of the storage is prolonged. In a storage having a nonvolatile RAM of destructive read type and a volatile RAM and holding the same data in the nonvolatile and volatile RAMs, data is read out of the volatile RAM in reading and data is written in both volatile and nonvolatile RAMs in writing.

Memory module, memory controller, nonvolatile storage, nonvolatile storage system, and memory read/write method

A nonvolatile memory device () includes a plurality of physical blocks, each of which is provide with a nonvolatile memory (), a logic/physical address conversion table, a temporary block and a temporary table. The nonvolatile memory () includes a plurality of pages which are predetermined writing units, respectively. The logical-physical address conversion table () stores correspondence information between logic addresses and physical addresses of data to be stored in the physical blocks. The temporary block is a physical block to store data that are smaller in size than those of the page. The temporary table () stores correspondence information between logic addresses and physical addresses with respect to data to be stored in the temporary block.

Nonvolatile memory device including a logical-to-physical logig-to-physical address conversion table, a temporary block and a temporary table

A scan IC includes a switch circuit and a logic circuit. The switch circuit includes first and second transistors and a level shift circuit. First and second control signals that change between a logical '1' and a logical '0' are applied to an input terminal of the logic circuit. The logic circuit applies a third control signal to the first transistor and applies a fourth control signal to the second transistor based on the applied first and second control signals. A detection circuit is connected to the input terminal of the logic circuit. An abnormality of the scan IC is detected by the detection circuit.

Driving device and driving method of plasma display panel, and plasma display device

A card information-storing portion is provided in a semiconductor memory card, and information relating to access performance such as access condition and access rate is held in the storing portion. Further, an access device acquires the held information from the semiconductor memory card to make it possible that the information can be used for control of a file system. This optimizes processing of the access device and the semiconductor memory card independent of differences in characteristics of semiconductor memory cards and management methods used, realizing high-rate access from the access device to a semiconductor memory card.

Semiconductor memory card, access device and method

A memory controller for reducing a time to create an address management table during initialization of a memory card. The memory controller includes a read-write memory for temporarily storing the address management table and a second memory controller for writing, in a nonvolatile memory, an address management table temporarily stored in the read-write memory. The second memory controller also writes address range specifying information that specifies an address range, when a data writing destination is changed from a first address range to a second address range. The memory controller includes an address management table generator for reading distributed management information used for managing a state of at least one physical block included in the destination address range specified by the address range specifying information during initialization, and to generate the address management table based on the distributed management information.

Memory controller, nonvolatile storage device, nonvolatile storage system, and memory control method

With nonvolatile memory device employing a nonvolatile memory suc h as multiple-valued NAND flash memory or the like in which each memory cell holds data in a plurality of pages, there is such a problem that, if an error occurred under writing data, data stored in other page in the same group of the current page is changed, and hence the object of the present invention is to solve this problem. In writing data into a nonvolatile memory, when error occurred under writing data into a certain page, an error page identification partidentifies an error type and a physical address of the page where error occurred. An error correctorthen corrects errors occurred in other pages belonging to the same group of error occurrence page.

Memory controller, nonvolatile memory device, nonvolatile memory system and data writing method

A PDP driving circuit is comprised of a power recovery unit for recovering an electric power from a capacitive load by resonance operation with PDP which is the capacitive load Cp, and reusing the recovered power. The power recovery unit includes a recovery inductor for resonating with the capacitive load, a recovery switch element for connecting the recovery capacitor to the capacitive load and recovery inductor, and forming a channel for passing resonance current, a counterflow preventive diode for blocking flow of current in the recovery switch element in reverse polarity direction, and a protective diode for forming a closed current channel including the recovery inductor and recovery switch element when the counterflow preventive diode is changed from ON state to OFF state.

Plasma display panel driving circuit and plasma display apparatus

An address at which a writing error occurs is held, and after a completion of a series of writings, the data of the held address is read. Then, a faulty-block processing is performed only for the addresses, for which it is determined that retry of writing is required, thereby preventing an increase of faulty-blocks. This can suppress the problem that when a writing is performed in a particular flash memory, a writing error frequently occurs and a large number of faulty blocks occur.

Memory control circuit, nonvolatile storage apparatus, and memory control method

When a control unit () in a storage device () detects that a write end command or a data amount to be written has been transmitted from a host device (), the control unit () saves control information required for writing data in a control information save memory (). The control unit () also saves data which has not been written in storage medium into a buffer save memory () from a data buffer () and releases the busy state for the host device (). The control unit () writes the saved data into a storage medium (). Even if the power is turned OFF before completion of write, write can be performed into the storage medium () by using the saved data when the power is turned ON next time.

Storage device with buffer control unit

A semiconductor memory device in which data is not written in a transfer destination under a state including an error when an error occurs at the time of reading data at the transfer destination. The semiconductor memory device () comprising a nonvolatile memory () having a data writing unit smaller than a physical block is provided with an error detecting/correcting circuit () in the non-volatile memory (). When data stored in a specified block of the non-volatile memory () is transferred to a different physical block and written, the error detecting/correcting circuit () performs error detection and correction of data.

Semiconductor memory device

A nonvolatile storage device is provided with a nonvolatile main storage memory whose erase size is larger than a cluster size, and a buffer, i.e. a nonvolatile auxiliary storage memory. At the time of writing data in the memory, the data is temporarily stored in the buffer, then, a plurality of data in the buffer are collectively taken out to be stored in the main storage memory. Data in an original block is saved in a write block in the main storage memory. Thus, the data can be written in the main storage memory at a high speed.

Memory controller, nonvolatile storage device, nonvolatile storage system, and data writing method

Growing community of inventors

Kobe, Japan

Manabu Inoue