Zeon Corporation

Nippon Steel Corporation

Nippon Steel Sumitomo Metal Corporation

Manabu Hoshino

Takayuki Kagaya

Tetsuya Namegawa

Shinichi Omiya

Masaaki Fujioka

Tadashi Ishikawa

Masanori Minagawa

Ryuji Uemori

Ryuichi Honma

Akihiko Kojima

Yoichi Tanaka

Hirokazu Sugiyama

Kazutoshi Ichikawa

Tatsuya Kumagai

Masaki Mizoguchi

Kazuaki Mitsuyasu

Youichi Tanaka

A copolymer includes a monomer unit (A) represented by formula (I), shown below, and a monomer unit (B) represented by formula (II), shown below, and has a weight-average molecular weight of 230,000 or more. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, Ris an alkyl group, Ris hydrogen, an alkyl group, a halogen atom, a haloalkyl group, a hydroxy group, a carboxy group, or a halocarboxy group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one Ris present, each Rmay be the same or different.

Copolymer, positive resist composition, and method of forming resist pattern

Provided is a positive resist composition for EUV lithography that can form a resist film having high sensitivity to extreme ultraviolet light. The positive resist composition contains a solvent and a copolymer that includes a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). In the formulae, Rindicates an organic group including 5 or more fluorine atoms, le indicates a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, Rindicates a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.

Positive resist composition for EUV lithography and method of forming resist pattern

Provided are a resist composition that can improve coatability (coating film formability) with respect to a substrate in spin coating and close adherence of a resist film and that can form a good pattern, and a resist film in which a good pattern is formed. The resist composition contains a polymer, a solvent, and an aromatic vinyl monomer, and has a content of the aromatic vinyl monomer relative to the polymer of not less than 10 mass ppm and not more than 30,000 mass ppm.

Resist composition and resist film

Provided is a copolymer that can be favorably used as a main chain scission-type positive resist that has excellent heat resistance and that can form a resist pattern having excellent resolution and clarity. The copolymer includes a monomer unit (A) represented by the following formula (I) and a monomer unit (B) represented by the following formula (II), and has a molecular weight distribution of 1.7 or less. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, Ris an alkyl group, Ris an alkyl group, a halogen atom, or a haloalkyl group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one Ris present, each Rmay be the same or different.

Copolymer and positive resist composition

Provided is a polymer that when used as a main chain scission-type positive resist, can sufficiently inhibit resist pattern collapse, can favorably form a clear resist pattern, and can also improve sensitivity. The polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below. [In formula (I), Ris an organic group including not fewer than 5 and not more than 7 fluorine atoms. In formula (II), Ris a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, Ris a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of not less than 0 and not more than 5, and p+q=5.] 

Polymer, positive resist composition, and method of forming resist pattern

A Ni steel has a chemical composition within a predetermined range, in which a metallographic structure of a thickness middle portion contains 2.0 vol % to 20.0 vol % of an austenite phase, an average grain size of prior austenite grains is 3.0 &#x3bc;m to 12.0 &#x3bc;m, an average aspect ratio of the prior austenite grains is 2.6 to 10.0, a plate thickness is 4.5 mm to 20 mm, a yield stress at room temperature is 590 MPa to 710 MPa, and a tensile strength at the room temperature is 690 MPa to 810 MPa, when the plate thickness is more than 16 mm, the Ni steel contains Ni: 11.5% or more, and when the plate thickness is 16 mm or less and the Ni steel contains Ni: less than 11.5%, the average grain size of the prior austenite grains is 6.0 &#x3bc;m or less.

Nickel-containing steel for low temperature

A nickel-containing steel for low temperature according to an aspect of the present invention has a chemical composition within a predetermined range, in which a metallographic structure of a thickness middle portion contains 2.0 vol % to 20.0 vol % of an austenite phase, an average grain size of prior austenite grains is 3.0 &#x3bc;m to 15.0 &#x3bc;m, an average aspect ratio of the prior austenite grains is 1.0 to 2.4, a plate thickness is 4.5 mm to 30 mm, the chemical composition and the average grain size of the prior austenite grains are further limited depending on the plate thickness, a yield stress at room temperature is 460 MPa to 710 MPa, and a tensile strength at the room temperature is 560 MPa to 810 MPa.

Provided is a positive resist composition capable of improving the adhesion between a resist film formed through pre-baking and a workpiece and reducing changes in the molecular weight of the polymer in the resist film before and after pre-baking step over broader ranges of heating temperature and heating time (at lower heating temperatures) during pre-baking. The positive resist composition comprises a polymer and a solvent, wherein the polymer has a monomer unit (A) represented by the following general formula (I) and a monomer unit (B) represented by the following general formula (II), and wherein the solvent is at least one selected from the group consisting of isoamyl acetate, n-butyl formate, isobutyl formate, n-amyl formate, and isoamyl formate: 

Positive resist composition, resist film formation method, and laminate manufacturing method

This nickel-containing steel for low temperature includes, as a chemical composition, by mass %: C: 0.020% to 0.070%; Si: 0.03% to 0.30%; Mn: 0.20% to 0.80%; Ni: 12.5% to 17.4%; Al: 0.010% to 0.060%; N: 0.0015% to 0.0060%; and O: 0.0007% to 0.0030%, in which a metallographic structure contains 2.0% to 30.0% of an austenite phase by volume fraction %, in a thickness middle portion of a section parallel to a rolling direction and a thickness direction, an average grain size of prior austenite grains is 3.0 &#x3bc;m to 20.0 &#x3bc;m, and an average aspect ratio of the prior austenite grains is 1.0 to 2.9.

This nickel-containing steel for low temperature includes, as a chemical composition, by mass %: C: 0.030% to 0.070%; Si: 0.03% to 0.30%; Mn: 0.10% to 0.80%; Ni: 12.5% to 17.4%; Mo: 0.03% to 0.60%; Al: 0.010% to 0.060%; N: 0.0015% to 0.0060%; and O: 0.0007% to 0.0030%, in which a metallographic structure contains 2.0% to 30.0% of an austenite phase by volume fraction %, in a thickness middle portion of a section parallel to a rolling direction and a thickness direction, an average grain size of prior austenite grains is 3.0 &#x3bc;m to 20.0 &#x3bc;m, and an average aspect ratio of the prior austenite grains is 3.1 to 10.0.

A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a solvent and a polymer including monomer units represented by the following formulae (I) and (II), respectively; an exposure step; a development step; and a step of rinsing the developed resist film using a rinsing liquid having a surface tension of 20.0 mN/m or less. In formula (I), Ris an organic group including 3 to 7 fluorine atoms. In formula (II), Ris a hydrogen atom, a fluorine atom, or an unsubstituted or fluorine atom-substituted alkyl group, Ris a hydrogen atom or an unsubstituted or fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5. 

Method of forming resist pattern

The objective is to favorably form a clear resist pattern using a resist composition containing a polymer that can inhibit resist pattern collapse when used as a main chain scission-type positive resist. A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a polymer including a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, with a proviso that at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom; an exposure step; and a development step. The development is carried out using a developer having a surface tension of 17 mN/m or less. 

A steel for electron-beam welding according to the present invention includes at least C: 0.02% to 0.10%, Si: 0.03% to 0.30%, Mn: 1.5% to 2.5%, Ti: 0.005% to 0.015%, N: 0.0020% to 0.0060%, and O: 0.0010% to 0.0035%, further includes S: limited to 0.010% or less, P: limited to 0.015% or less, and Al: limited to 0.004% or less, with a balance including iron and inevitable impurities. An index value CeEBB obtained by substituting composition of the steel into following Formula 1 falls in the range of 0.42 to 0.65%, the number of oxide having an equivalent circle diameter of 1.0 &#x3bc;m or more is 20 pieces/mmor less at a thickness center portion in cross section along the thickness direction of the steel, and the number of oxide containing Ti of 10% or more and having an equivalent circle diameter of not less than 0.05 &#x3bc;m or more and less than 0.5 &#x3bc;m falls in the range of 1&#xd7;10to 1&#xd7;10pieces/mmat the thickness center portion.CeEBB=C+&#xbc;Mn+ 1/15Cu+ 1/15Ni+&#x2155;Cr+&#x2155;Mo+&#x2155;V&#x2003;&#x2003;(Formula 1)

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Tokyo, Japan

Manabu Hoshino