Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Manabu Horita

Masaki Kato

Masahiko Fujita

Kazunari Michii

Masaharu Yoshida

Kazuyuki Misumi

Tatsuya Fukase

Masataka Takehara

When a power semiconductor device is energized, heat generated from upper-side power semiconductor chips mounted on a P-potential electrode transfers to a first heat mass portion and a second heat mass portion, and heat generated from lower-side power semiconductor chips mounted on a intermediate potential electrode transfers to a resistor. A lead frame, the power semiconductor chip, an inner lead and the resistor are placed in symmetry with respect to a centerline, which can reduce the difference among the temperature increases of the power semiconductor chips when energized. In this way, transient temperature increase of the power semiconductor chip can be suppressed without adding a new member, such as a heat diffusion plate.

Power semiconductor device

A plastic packaged semiconductor device is constructed by sealing, with a sealing plastic, a semiconductor chip which has an electrode pad arranged in a central portion of an upper surface, a die pad to which the semiconductor chip is die-bonded, bonding wires which are connected to the electrode pad, and inner leads which are arranged in close vicinity of the die pad and have tip portions having upper flat surfaces which are positioned at a level equal to or higher than the upper surface of the semiconductor chip and to which the bonding wires are connected. Accordingly, the small thin plastic packaged semiconductor device in which the bonding wires do never come into contact with the edge of the semiconductor chip can be achieved.

Lead frame with raised leads and plastic packaged semiconductor device using the same

An apparatus for bonding lead terminals to bumps of a semiconductor chip by using a laser beam. On the basis of a temperature signal obtained from irradiation of a lead terminal and a bump to be bonded together under irradiation of the laser beam, state of contact and the bond between the bump and the lead terminal are decided. The bonding between the terminals and the bumps can be realized without fail by checking the state of contact therebetween in precedence to the bonding operation.

Bonding method and apparatus

Growing community of inventors

Tokyo, Japan

Manabu Horita