Sunedison Semiconductor Limited (uen201334164h)

Memc Electronic Materials, Inc.

Sunedison Semiconductor Limited

Manabu Hamano

John Allen Pitney

Srikanth Kommu

Lance G Hellwig

Thomas A Torack

Apparatus and methods for wafer processes such as etching and chemical vapor deposition processes are disclosed. In some embodiments, the apparatus includes a susceptor and a ring disposed beneath the susceptor to influence a thickness of the deposited epitaxial layer.

Susceptor assemblies for supporting wafers in a reactor apparatus

In one aspect, a system for depositing a layer on a substrate is provided. The system includes a processing chamber, a gas injecting port, a gas distribution plate, and a plug. The gas injecting port is disposed upstream from the processing chamber. The gas distribution plate is disposed between the gas injecting port and the processing chamber, and includes an elongate planar body and an array of holes therein. The plug is sized to be received within one of the holes, and includes an orifice therethrough for permitting the passage of gas. The plug is capable of being removably secured to the gas distribution plate within one of the holes.

Gas distribution plate for chemical vapor deposition systems and methods of using same

A method of fabricating a semiconductor processing device includes providing a susceptor including a substantially cylindrical body portion having opposing upper and lower surfaces. The body portion has a diameter larger than a wafer diameter. The method also includes providing a set of holes circumferentially disposed at a first susceptor diameter, the set of holes being evenly spaced with respect to adjacent holes and extending through the upper and lower surfaces in an area. The first susceptor diameter is larger than the wafer diameter, and holes are omitted along the first diameter in a set of predetermined orientations.

Methods for fabricating a semiconductor wafer processing device

A carrier blade for transferring a semiconductor wafers into and out of a deposition chamber may include transition surfaces sloping downward from ledge surfaces. The transition surfaces slope from the corresponding ledges at angles that are greater than about 90 degrees so that the edges between the ledge surfaces and the transition surfaces are not sharp. The carrier blade may include bevels extending from the ledge surface(s) to upper lateral edges of the carrier blade.

Growing community of inventors

Utsunomiya, Japan

Manabu Hamano