Victor Company of Japan, Limited

Manabu Endo

Toshiki Yoshida

Yoshihiro Hori

Yoshihisa Koyama

Keiichiro Doi

Taku Katayama

Masashi Yoshimura

Katsuhiko Morita

An LED (light emitting diode) array of the present invention has a plurality of light emitting diodes aligned in row on a substrate crystal. Each of the light emitting diodes has a double hetero-structure formed by causing a light emitting layer to be interposed between p-type and n-type semi-conductive layers and is isolated with isolating mesa grooves. A reflecting layer is provided between the substrate crystal and one of the p-type and n-type semi-conductive layers. The reflecting layer comprises a plurality of semi-conductive layers having at least different refractive indexes of 2 or more than 2-kinds, each of the semi-conductive layers made of semiconductor having the same polarity as that of the substrate crystal and having a wider forbidden band width than that of the light emitting layer. Further, the isolating mesa grooves are provided by a wet etching using an etching liquid of H.sub.3 PO.sub.4 .multidot.H.sub.2 O.sub.2 having volume ratio of H.sub.3 PO.sub.4 : H.sub.2 O.sub.2 =1.about.5:1, thus, the LED array having a high integration and a high light emitting output can be successfully produced.

Light emitting diode array and production method of the light emitting

In a field effect transistor (JFET) having a compound semiconducting substrate, a buffer layer having a guard-ring, an active layer, source regions, drain regions, and gate regions, the guard-ring is separated from the active layer whereby gate junction capacitance and gate leakage current are lowered without raising a gate resistance value. As a result, noise characteristics and high frequency characteristics can be improved.

Field effect transistor with active layer apart from guard-ring

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Yokohama, Japan

Manabu Endo