Zycube Co., Ltd.

Other

Manabu Bonkohara

Hirofumi Nakamura

Qiwei He

An interposer is provided that suppresses heat conduction more effectively between two heat sources when the interposer is placed between the heat sources. An interposercomprises a body having a cavitymaintained in vacuum; insulating layersandformed respectively on upper and lower wallsandof the body; and heat reflecting layersandformed respectively on the insulating layersand. The interposerthermally insulates semiconductor devicesandmounted respectively on upper and lower sides of the interposer

Interposer and semiconductor module using the same

A method of forming a low-resistance, high-reliability through/embedded electrode is provided, where the electrode can be arranged in a higher density according to the miniaturization of the semiconductor manufacturing technology. This method includes the step of filling an openingof a substratewith a pasteof a first conductive material and drying the paste; the step of solid-phase sintering the pastefilled in the opening, generating a first porous conductor; the step of applying a paste of a second conductive material so as to cover the first conductor; and the step of melting the paste of the second conductive material by heat treatment, impregnating the second conductive material into the first conductor

Electrode, electrode material, and electrode formation method

A three-dimensional semiconductor integrated circuit device is provided. A first semiconductor chip includes a solid-state circuit and is smaller than a base, and is stacked on the base. The first chip is buried by a first filling material having approximately the same contour as the base. Buried electrodes that penetrate through the first chip along its thickness direction are formed in the first chip. A second semiconductor chip includes a solid-state circuit and is smaller than the base, and is stacked on the first chip. The second chip is buried by a second filling material having approximately the same contour as the base. Buried electrodes that penetrate through the second chip along its thickness direction are formed in the second chip. The first and second filling materials have processibilities required for forming the buried electrodes and thermal expansion coefficients equivalent to those of the first and second chips, respectively.

Three-dimensional semiconductor integrated circuit device and method of fabricating the same

Image quality degradation due to external light irradiated to an edge section of a transparent cover of a solid-state imaging device and external light propagating in the cover is prevented with a simple structure. A glass coverformed to cover the whole surface of an imaging regionof a solid-state imaging elementis constituted by a transmission sectioncorresponding to the imaging region, and an edge sectionthat surrounds the transmission sectionoutside the transmission section. The edge sectionof the coveris selectively removed around a periphery of the edge section, thereby forming a frustum-shaped part whose cross-sectional area decreases monotonously from its exit side to its incidence side in the cover. An optical function filmhaving an optical absorption, reflection, or scattering action is formed on an outer face of the frustum-shaped part.

Growing community of inventors

Kanagawa, Japan

Manabu Bonkohara