Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Ritdisplay Corporation

Hannstar Display Corporation

Hannstar Display (nanjing) Corporation

Man-Kit Leung

Chi-Ming Yang

Ying-Hsueh Chang Chien

Yu-Ming Lee

Kuo-Huang Hsieh

Chao-Hui Kuo

Kuei-Hui Yang

Wen-Chang Chen

Jiun-Haw Lee

Hung-Lin Chen

Chi-Chih Liao

Tzu-Chin Tang

Yung-Chih Lee

Yi-Meen Chou

Li-Chung Kuo

Wei-Fang Su

Wen-Yen Chiu

Chi-An Dai

Yu-Lin Chiang

Lee-Yih Wang

King-Fu Lin

Hsiang Lun Hsu

Shen-shen Wang

Hong-Jun Chen

Hung-Chun Chang

Jau-Jiun Huang

Hsin-Chung Ke

Cheng-Hsiu Ku

Kang-Jyun Peng

Wen-Bin Liau

Hung-Ren Wang

Chi-Shin Lee

Jun-Ming Huang

Cheng-Yuan Shih

A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.

Semiconductor devices employing a barrier layer

An organic electroluminescent material, an organic electroluminescent device, a quantum dot electroluminescent unit, and a quantum dot electroluminescent device are disclosed. The quantum dot electroluminescent unit includes a plurality of electro-phosphorescent quantum dots and at least an organic electroluminescent material, and the electro-phosphorescent quantum dots disperse in the organic electroluminescent material. The organic electroluminescent material has a structure of the following Formula (1), wherein one or two of R, R, R, R, or Rare independent triazole derivatives, and the triazole derivatives have the structure of the following Formula (2), 

Organic electroluminescent material, organic electroluminescent device and quantum dot electroluminescent unit

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process.

Semiconductor devices and methods of manufacture thereof

The present invention discloses an iridium complex containing a (pentaphenyl)phenyl ligand, having the following general equation: in which G is primary ligand, R' and R&#x2033; are auxiliary ligands. On the other hand, the present invention discloses a compound with a 9-[(pentaphenyl)phenyl]carbazole structure and its polymeric derivative.

(Pentaphenyl)phenyl group containing compound, polymeric derivative thereof and method for forming the same

The present invention discloses hole or electron injection polymers and prepolymers, hole or electron transport polymers and prepolymers, which comprises a plurality of conjugated or non-conjugated structures with electronic function and a plurality of connecting structures, wherein the connecting structure is used to connect different conjugated or non-conjugated structures with electronic function, and the connecting structure comprises any one or any combination of the following group: ether based group, ester based group, urethane based group, urea based group, carbonate based group, nitrogen atom based group, amide based group, and imide based group. Moreover, this invention also discloses a method for forming the mentioned charge injection or transport polymers and prepolymers. Additionally, this invention provides hole injection layer or hole transport layer or electron injection layer or electron transport layer comprising copolymers with a first structure unit with hole injecting/transporting property and a second structure unit with electron injecting/transporting property.

Hole or electron injection polymers and prepolymers, hole or electron transport polymers and prepolymers, method for forming the same, and their application

The present invention discloses a method by utilizing chemical reaction or specific attractive forces (complexation or hydrogen bonding) for forming self-synthesizing conductive or conjugated polymer film and its application. First of all, at least one photoresist layer with a first functional group and a specific pattern is formed, so that the first functional group can bond a second functional group of a conductive or conjugated polymer unit, whereby a conductive or conjugated polymer film with specific pattern is formed. Furthermore, this invention can be applied for forming emitting films, especially for forming emitting layers of OLED/PLED elements.

Method for forming self-synthesizing conductive or conjugated polymer film and application

An organic light-emitting diode comprises an anode, an organic electroluminescent layer, a metal doped layer, and a cathode, in sequence, on a substrate; wherein the metal doped layer comprises an organic compound represented by the formula (1) doped with a metal. 

Organic light-emitting diode and material applied thereto

An organic electroluminescent material of the formula:

Organic electroluminescent material and electroluminescent device by using the same

An organic light-emitting diode comprises an anode, an organic electroluminescent layer, a metal doped layer, and a cathode, in sequence, on a substrate; wherein the metal doped layer comprises an organic compound represented by the formula (1) doped with a metal.

Growing community of inventors

Taipei, Taiwan

Man-Kit Leung