National Institute of Information and Communications Technology, Incorporated

Tamura Corporation

Tokyo University of Agriculture and Technology

Novel Crystal Technology, Inc.

Man Hoi Wong

Kohei Sasaki

Masataka Higashiwaki

Akinori Koukitu

Yoshinao Kumagai

Hisashi Murakami

Ken Goto

Daiki Wakimoto

Yoshiaki Nakata

Takafumi Kamimura

A GaO-based semiconductor device includes a GaO-based crystal layer including a donor, and an N-doped region formed in at least a part of the GaO-based crystal layer.

GA2O3-based semiconductor device

A semiconductor element includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a channel layer on the buffer layer, the channel layer including a &#x3b2;-GaO-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a &#x3b2;-GaO-based single crystal including a donor impurity.

Semiconductor element and crystalline laminate structure

Growing community of inventors

Koganei, Japan

Man Hoi Wong