Globalfoundries U.S. Inc.

Globalfoundries Inc.

Man Gu

Wenjun Li

Haiting Wang

Tao Han

Hong Yu

Jagar Singh

Jianwei Peng

Wang Zheng

Jeffrey Bowman Johnson

Jinping Liu

Michael Vincent Aquilino

Charlotte DeWan Adams

Jiehui Shu

Keith Howard Tabakman

Daniel J Jaeger

George Robert Mulfinger

Bingwu Liu

Baofu Zhu

Halting Wang

Tao Chu

Junsic Hong

Bradley Morgenfeld

Eric S Kozarsky

Tung-Hsing Lee

Sudarshan Narayanan

Shafiullah Syed

Asli Sirman

Teng-Yin Lin

Kavya Sree Duggimpudi

Rong-Ting Liou

A substrate is provided. The substrate includes a base, a semiconductor layer over the base, and an insulator layer between the base and the semiconductor layer. The semiconductor layer has a first semiconductor layer portion having a first thickness, a second semiconductor layer portion having a second thickness, and a third semiconductor layer portion having a third thickness, and the first thickness, the second thickness, and the third thickness are different from each other.

Substrates of semiconductor devices having varying thicknesses of semiconductor layers

Structures for a transistor and methods of forming a structure for a transistor. The structure includes a first dielectric spacer, a second dielectric spacer, and a gate laterally between the first dielectric spacer and the second dielectric spacer. The gate includes a first silicide layer extending from the first dielectric spacer to the second dielectric spacer. The structure further includes a second silicide layer within the first silicide layer, and a contact that is aligned to the second silicide layer.

Transistors with multiple silicide layers

Device structures for a high-voltage semiconductor device and methods of forming such device structures. The structure comprises a semiconductor substrate including a trench, and a field-effect transistor including a first and second source/drain regions in the semiconductor substrate, a gate dielectric inside the trench, and a gate on the gate dielectric. The gate and the gate dielectric are disposed laterally between the first and second source/drain regions.

High-voltage semiconductor device structures

An IC structure that includes a trench isolation (TI) in a substrate having three portions of different dielectric materials. The portions may also have different widths. The TI may include a lower portion including a first dielectric material and having a first width, a middle portion including the first dielectric material and an outer second dielectric material, and an upper portion including a third dielectric material and having a second width greater than the first width. The first, second and third dielectric materials are different.

Trench isolation having three portions with different materials, and LDMOS FET including same

A FinFET includes a semiconductor fin, and a source region and a drain region in the same semiconductor fin. The drain region has a first fin height above a trench isolation; and the source region has a second fin height above the trench isolation. The first fin height is less than the second fin height. The FinFET may be used, for example, in a scaled laterally diffused metal-oxide semiconductor (LDMOS) application, and exhibits reduced parasitic capacitance for improved radio frequency (RF) performance. A drain extension region may have the first fin height, and a channel region may have the second fin height. A method of making the FinFET is also disclosed.

FinFET with shorter fin height in drain region than source region and related method

Semiconductor structures include a channel region, a gate dielectric on the channel region, source and drain structures on opposite sides of the channel region, and a gate conductor between the source and drain structures on the gate dielectric. The source and drain structures include source and drain silicides. The gate conductor includes a gate conductor silicide. The gate conductor silicide is thicker than the source and drain silicides.

Carbon implantation for thicker gate silicide

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes a lateral bipolar junction transistor including an extrinsic base region and a bilayer dielectric spacer on sidewalls of the extrinsic base region, and a p-n junction positioned under the bilayer dielectric spacer between the extrinsic base region and at least an emitter region.

Lateral bipolar transistor

Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a collector having a raised portion, an emitter having a raised portion, and a base laterally arranged between the raised portion of the emitter and the raised portion of the collector. The base includes an intrinsic base layer and an extrinsic base layer stacked with the intrinsic base layer. The structure further includes a stress liner positioned to overlap with the raised portion of the collector, the raised portion of the emitter, and the extrinsic base layer.

Bipolar junction transistors including a stress liner

An integrated circuit (IC) structure includes a semiconductor fin having a first longitudinal extent and a second longitudinal extent. The semiconductor fin has an upper fin portion having a uniform lateral dimension in the first longitudinal extent and the second longitudinal extent, a first subfin portion under the upper fin portion in the first longitudinal extent having a first lateral dimension, and a second subfin portion under the upper fin portion in the second longitudinal extent having a second lateral dimension different than the first lateral dimension. The second subfin may be used in a drain extension region of a laterally-diffused metal-oxide semiconductor (LDMOS) device. The second subfin reduces subfin current and improves HCI reliability, regardless of the type of LDMOS device.

IC structure with fin having subfin extents with different lateral dimensions

Integrated circuit (IC) structures including asymmetric, recessed source and drain regions and methods for forming are provided. In an example, the IC structure includes a substrate, a gate structure over the substrate, first and second spacers contacting respective, opposite sidewalls of the gate structure, and source and drain regions on opposite sides of the gate structure. In one configuration, the source region includes an upper source portion having a first lateral width, and a lower source portion having a second lateral width greater than the first lateral width, and the drain region includes an upper drain portion having a third lateral width, and a lower drain portion having a fourth lateral width that is substantially the same as the third lateral width.

Integrated circuit structure including asymmetric, recessed source and drain region and method for forming same

Integrated circuit (IC) structures including buried insulator layer and methods for forming are provided. In a non-limiting example, a IC structure includes: a substrate; a first fin over the substrate; a source region and a drain region in the first fin; a first gate structure and a second gate structure over the first fin, the first and the second gate structures positioned between the source region and the drain region; and a buried insulator layer including a portion disposed under the first fin.

LDMOS finFET structure with buried insulator layer and method for forming same

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A semiconductor substrate includes a first region, a second region, and a first source/drain region in the first region. A semiconductor fin is located over the second region of the semiconductor substrate. The semiconductor fin extends laterally along a longitudinal axis to connect to the first region of the semiconductor substrate. The structure includes a second source/drain region including an epitaxial semiconductor layer coupled to the first semiconductor fin, and a gate structure that extends over the semiconductor fin. The gate structure includes a first sidewall and a second sidewall opposite the first sidewall, the first source/drain region is positioned adjacent to the first sidewall of the gate structure, and the second source/drain region is positioned adjacent to the second sidewall of the gate structure.

Transistors with hybrid source/drain regions

Structures including a passive device and methods of forming such structures. Multiple fins are positioned on a substrate, and an interconnect structure is positioned over the substrate. The fins contain a polycrystalline semiconductor material, and the interconnect structure includes a passive device that is positioned over the fins. The passive device may be, for example, an inductor or a transmission line.

Passive devices over polycrystalline semiconductor fins

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A gate structure extends over a semiconductor body, a first source/drain region includes an epitaxial semiconductor layer on a first portion of the semiconductor body, and a second source/drain region is positioned in a second portion of the semiconductor body. The gate structure includes a first sidewall and a second sidewall opposite the first sidewall, the first source/drain region is positioned adjacent to the first sidewall of the gate structure, and the second source/drain region is positioned adjacent to the second sidewall of the gate structure. The first source/drain region has a first width, and the second source/drain region has a second width that is greater than the first width.

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Malta, NY, United States of America

Man Gu