Samsung Electronics Co., Ltd.

Man-Geun Cho

Kwan-Sik Kim

Beom-suk Lee

Seung-Hoon Choi

Dong-Chan Kim

Sang-Su Park

Ja-Eung Koo

Il-Young Yoon

Min-Jun Choi

Chang-Hwa Kim

Hyung-yong Kim

Jung-Hun Kim

Jae-Sung Hur

Hae-min Lim

Yoon-Kyoung Kim

A method of manufacturing a semiconductor device includes forming a via including a first conductive material on an inner wall of a trench on a substrate. The method further includes forming a first insulating interlayer on the substrate. The first insulating interlayer covers the via and partially fills the trench, and the first insulating interlayer has a non-flat upper surface. The method further includes forming a polishing stop layer on the first insulating interlayer, forming a second insulating interlayer on the polishing stop layer, in which the second insulating interlayer fills a remaining portion of the trench, planarizing the second insulating interlayer until the polishing stop layer is exposed, and etching the polishing stop layer and the first and second insulating interlayers using a dry etching process until remaining portions of the polishing stop layer except for a portion of the polishing stop layer in the trench are removed.

Semiconductor device and method of manufacturing the same

Organic image sensors are provided. An organic image sensor includes a pixel electrode including a plurality of first electrodes spaced apart from each other. The organic image sensor includes an insulating region including a protruding portion that protrudes beyond surfaces of the plurality of first electrodes. The organic image sensor includes an organic photoelectric conversion layer on the pixel electrode and the protruding portion of the insulating region. Moreover, the organic image sensor includes a second electrode opposite the pixel electrode and on the organic photoelectric conversion layer.

Organic image sensors

Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.

Image sensor with stacked structures

An image sensor includes a plurality of photo diodes disposed at a semiconductor substrate, and a splitter disposed on the photo diodes. The splitter splits an incident light depending on a wavelength so that split light of different colors enters different photo diodes, respectively. The splitter includes a first pattern structure having a cross-sectional structure in which a plurality of refractive layer patterns are deposited in a lateral direction.

Image sensor including splitter

Growing community of inventors

Suwon-si, South Korea

Man-Geun Cho