The Hong Kong University of Science and Technology

Fleming International Limited

Man Chit Wong

Hoi Sing Kwok

Zhiguo Meng

Lei Lu

Hoi-Sing Kwok

Jiaxin Sun

Wei Zhou

Shuyun Zhao

Dongli Zhang

Chunya Wu

Yitshak Zohar

Xiuling Zhu

Shuang Xie

Anish Kumar Kottarath Parambil

Meng Zhang

Hua-Jun Peng

Mingxiang Wang

Huajun Peng

Tianfu Ma

Johnny Kin-On Sin

Rongsheng Chen

Xuejie Shi

A protective device and a candle wick burning lamp assembly are provided, wherein the candle wick burning lamp includes a container and a candle wick structure. The candle wick structure includes a candle wick body and a support base fixed with one end of the candle wick body. The support base is placed at a bottom of the container. The bottom of the container is in a circular structure. The protective device includes a central portion and a branch portion. The branch portion is connected to the central portion. A length of the branch portion is 0.7 to 1 time a radius of the circular structure. At least two branch portions are arranged. At least one of the at least two branch portions and/or the central portion are provided with a through hole. The through hole allows the candle wick body to pass through.

Protective device and candle wick burning lamp assembly

This disclosure relates generally to the three-dimensional (3D) integrated thin-film transistors (TFTs) with silicon and metal-oxide (MO) semiconductors as the active layers. In one or more embodiments, an apparatus is provided that comprises a first transistor comprising a silicon active layer, and a second transistor comprising a metal oxide active layer. The second transistor is vertically stacked on the first transistor, and the first transistor and the second transistor share a gate electrode formed between the silicon active layer and the metal oxide active layer. With these embodiments, the gate electrode corresponds to a top gate of the first transistor and a bottom gate of the second transistor.

Integration of silicon thin-film transistors and metal-oxide thin film transistors

An apparatus is provided that includes a substrate and source and drain regions within an annealed active layer having resulted from an annealing of an active layer comprising metal-oxide and formed on the substrate, and an impermeable layer over the source and drain regions of the annealed active layer, wherein the annealing resulting in the annealed active layer was performed with the impermeable layer over portions of the active layer corresponding to the source and drain regions, thereby resulting in a reduction of a resistivity of the source and drain regions of the annealed active layer relative to the active layer. In another aspect, a junctionless transistor is provided wherein the entire active area has a low resistivity based on annealing of an active layer including metal oxide while uncovered or at least partially covered with layers of various gas permeability under oxidizing or non-oxidizing conditions.

Metal oxide thin film transistor with channel, source and drain regions respectively capped with covers of different gas permeability

Thin film transistors are provided that include a metal oxide active layer with source and drain regions having a reduced resistivity relative to the metal oxide based on doping of the source and drain regions at room temperature. In an aspect, a transistor structure is provided, that includes a substrate, and source and drain regions within a doped active layer having resulted from doping of an active layer comprising metal-oxide and formed on the substrate, wherein the doped active layer was doped at room temperature and without thermal annealing, thereby resulting in a reduction of a resistivity of the source and drain regions of the doped active layer relative to the active layer prior to the doping. In an aspect, the source and drain regions have a resistivity of about 10.0 m&#x3a9;&#xb7;cm after being doped with stable ions and without subsequent activation of the ions via annealing.

Metal oxide thin film transistor with source and drain regions doped at room temperature

Techniques are provided for forming thin film transistors having a polycrystalline silicon active layer formed by metal-induced crystallization (MIC) of amorphous silicon in an oxidizing atmosphere. In an aspect, a transistor device, is provided that includes a source region and a drain region formed on a substrate, and an active channel region formed on the substrate and electrically connecting the source region and the drain region. The active channel region is formed with a polycrystalline silicon layer having resulted from annealing an amorphous silicon layer formed on the substrate and having a metal layer formed thereon, wherein the annealing of the amorphous silicon layer was at least partially performed in an oxidizing ambience, thereby resulting in crystallization of the amorphous silicon layer to form the polycrystalline silicon layer.

Metal-induced crystallization of amorphous silicon in an oxidizing atmosphere

The invention provides an organic light emitting diode (OLED), having a substrate, an anode layer of silver or gold, wherein the anode layer is treated with CFplasma to enhance the hole injection of the semitransparent anode layer.

Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device

The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase ; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

Metal-induced crystallization of amorphous silicon in thin film transistors

An organic light-emitting diode display which can display independent images on both sides is described. This display can be driven with passive matrix or active matrix schemes. The invention combines a unique stacked organic diode structure and special driving schemes involving time-sequential reversed fields.

Double sided emission organic light emitting diode display

A thin-film transistor includes a source and a drain that have each been replaced with a metal by a heat-treatment at a temperature within the range of 250&#xb0; C. and 500&#xb0; C.

Thin-film transistors with metal source and drain and methods of fabrication

Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon 'islands'. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.

Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom

The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

The present invention provides an integrated electronic microphone formed as part of a semiconductor device, and a manufacturing method therefor. The microphone is formed with a sensing electrode as part of a sensing membrane, and the sensing electrode is connected to the gate of a sensing transistor to provide an output. The microphone may be operated in constant bias or constant charge mode.

Integrated electronic microphone having a perforated rigid back plate membrane

An organic light emitting diode consisting of multiple organic layers, disposed between a transparent conducting anode and metallic cathode. The anode is provided with a metal fluoride layer to enhance the overall performance of the device, including higher power efficiency, lower voltage threshold and improved device operation stability.

Anode for organic light emitting diode

A metal induced lateral crystallization (MILC) poly-silicon material is produced by depositing a metal in a predefined pattern on amorphous silicon, and heat treating the silicon at a first temperature to form a MILC poly-Si material. The MILC poly-Si material is further heat treated at a second temperature higher than the first temperature to induce recrystallization. The second high temperature recrystallization step significantly enhances the material structure, and in particular the grain structure, of the poly-Si material with substantial benefits to the performance of semiconductor devices made therefrom.

Polysilicon material and semiconductor devices formed therefrom

The present invention provides a method for forming metal-induced laterally crystallized polysilicon in which the metal residue is reduced. A first low temperature lateral crystallization is performed using a metal crystallization-inducing agent such as nickel or a nickel compound. A second lateral crystallization is then carried out which may be either a low-temperature crystallization using metal residue from the first crystallization as the metal crystallization-inducing agent, or may be a high temperature crystallization that does not require a metal.

Growing community of inventors

Hong Kong, China

Man Chit Wong