Hitachi-kokusai Electric Inc.

Kokusai Electric Co., Ltd.

Mamoru Sueyoshi

Masanori Sakai

Kazuyuki Toyoda

Tsutomu Tanaka

Nobuhito Shima

Osamu Kasahara

Takaaki Noda

Yasuhiro Inokuchi

Takeo Hanashima

Kosuke Takagi

Shingo Nohara

Fumihide Ikeda

Masatoshi Takada

Kotaro Konno

Motoshi Sawada

Michiko Nishiwaki

A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.

Method of manufacturing semiconductor device by forming a film on a substrate, substrate processing apparatus, and recording medium

An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.

Apparatus and method for use in manufacturing a semiconductor device

A substrate processing apparatus comprises a hot-wall type processing chamber for processing a substrate, a heater capable of heating an interior of the processing chamber, a substrate holder capable of holding the substrate and processing the substrate in the processing chamber in a state where the substrate holder holds the substrate, and a mechanism, which is capable of allowing the substrate holder to hold the substrate and then transferring the substrate holder holding the substrate into the processing chamber, and/or which is capable of carrying out the substrate holder from the processing chamber in a state where the substrate holder holds the substrate, and then separating the substrate from the substrate holder.

Substrate processing apparatus and substrate processing method

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Tokyo, Japan

Mamoru Sueyoshi