Sony Semiconductor Solutions Corporation

Sony Corporation

Mamoru Sato

Akihiko Kato

Yusuke Oike

Masaki Sakakibara

Yukio Tagawa

Tadayuki Taura

Hongbo Zhu

Eriko Kato

Hiroyuki Iwaki

Hideki Naganuma

To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels. A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.

Solid-state imaging device

To improve an image quality in a solid-state imaging element that performs differential amplification. A reference-side amplification transistor supplies a reference current corresponding to a predetermined reference potential. A read-side amplification transistor supplies a signal current corresponding to a difference between a potential of a gate and the reference potential from a drain to a source. A pair of reset transistors initializes the potential of the gate and the reference potential. A potential control circuit controls a potential difference between the gate and the drain to a predetermined value when the potential of the gate and the reference potential are initialized.

Solid-state imaging element and imaging device

There is provided an imaging device, comprising differential amplifier circuitry comprising a first amplification transistor and a second amplification transistor; and a plurality of pixels including a first pixel and a second pixel, wherein the first pixel includes a first photoelectric converter, a first reset transistor, and the first amplification transistor, and wherein the second pixel includes a second photoelectric converter, a second reset transistor, and the second amplification transistor, wherein the first reset transistor is coupled to a first reset voltage, and wherein the second reset transistor is coupled to a second reset voltage different than the first reset voltage.

Signal processing device and solid-state imaging device

A selection pixel where signal readout is performed and a reference pixel where signal readout is not performed are arranged in a pixel array section, and an amplification transistor of the selection pixel and an amplification transistor of the reference pixel each source electrode of which is connected in common to a common wire are connected with a constant current source via the common wire to form a differential amplification circuit. Then, a bypass control section which selectively establishes connection between the constant current source and a differential output node of the differential amplification circuit and limits a voltage of the differential output node to a predetermined voltage by causing a bypass current to flow between the constant current source and the differential output node, and a current path for bypass current that supplies the bypass current to the constant current source through the pixel array section are included.

Imaging device and electronic equipment

A light detecting device includes: one or more switch transistors, a first pixel including a first floating diffusion region coupled to a first photoelectric converter through a first transfer transistor, and a first amplification transistor coupled to the first floating diffusion region, a second pixel including a second floating diffusion region coupled to a second photoelectric converter through a second transfer transistor, and a second amplification transistor coupled to the second floating diffusion region, and a third pixel including a third floating diffusion region coupled to a third photoelectric converter through a third transfer transistor, and a third amplification transistor coupled to the third floating diffusion region. A pixel signal is differentially amplified by the first and third amplification transistors. The first and second floating diffusion regions are selectively connected to each other via one of the one or more switch transistors.

Solid-state imaging apparatus and electronic device

Provided is a solid-state image pickup element that amplifies the difference between respective signals of a pair of pixels and enables a reduction in the number of wiring lines. The solid-state image pickup element includes an electric-charge accumulation unit, a reference reset transistor, and a readout reset transistor. The electric-charge accumulation unit accumulates electric charge transferred from a photoelectric conversion unit and generates signal voltage corresponding to the amount of the electric charge. The reference reset transistor supplies predetermined reset voltage to the electric-charge accumulation unit in a case of generating predetermined reference voltage. The readout reset transistor supplies voltage different from the reset voltage to the electric-charge accumulation unit in a case of reading out the signal voltage.

Solid-state image pickup element, electronic apparatus, and method of controlling solid-state image pickup element

To widen a dynamic range without reducing a frame rate in a solid-state imaging element provided with a differential amplifier circuit. The solid-state imaging element includes a reading circuit and a processing unit. The reading circuit performs processing of outputting a differentially amplified signal obtained by amplifying a difference between generated voltages of a pair of pixels and processing of outputting a pixel signal of the generated voltage of at least one of the pair of pixels each time the pair of pixels are exposed. The processing unit performs synthesis processing of synthesizing the output differentially amplified signal and the output pixel signal.

Solid-state imaging element, imaging apparatus, and method for controlling solid-state imaging element

A solid-state imaging device is disclosed. In one example, a solid-state imaging device includes a current mirror circuit connected to first and second vertical signal lines, first and second unit pixels connected to the first or the second vertical signal line, a current supply line connected to the first and the second unit pixels, and a constant current circuit connected to the current supply line. The unit pixels each include a photoelectric conversion element, a transfer transistor that transfers an electric charge generated in the photoelectric conversion element, first and second charge accumulation units that accumulate the transferred electric charge, a switching transistor configured to control accumulation of the electric charge by the second charge accumulation unit, and an amplification transistor that causes a voltage corresponding to electric charges accumulated the first and/or the second charge accumulation units to appear in the first or the second vertical signal line.

Solid-state imaging device and electronic apparatus

To suppress deterioration of image quality. A solid-state imaging device () according to an embodiment includes a first vertical signal line (VSLk) and a second vertical signal line (VSLk), a current mirror circuit () connected to the first and the second vertical signal lines, a first unit pixel () connected to the first vertical signal line, a second unit pixel (+1) connected to the second vertical signal line, a first unit cell (D) connected to the first vertical signal line, a second unit cell (D) connected to the second vertical signal line, a current supply line (VCOM) connected to the first and the second unit pixels and the first and the second unit cells, and a constant current circuit () connected to the current supply line. A first amplification transistor of the first unit pixel, a second amplification transistor of the second unit pixel, the current mirror circuit, and the constant current circuit constitute a first differential amplifier circuit, and a third amplification transistor of the first unit cell, a fourth amplification transistor of the second unit cell, the current mirror circuit, and the constant current circuit constitute a second differential amplifier circuit.

To increase a readout speed of a pixel signal in a non-differential mode in a solid-state image sensor that performs differential amplification in a differential mode and does not perform differential amplification in the non-differential mode. A connection control unit sequentially performs control of connecting a first pixel connected to a first signal line to a reset power supply via a third signal line and control of connecting a second pixel connected to a second signal line to the reset power supply via a fourth signal line in a differential mode, and performs control of connecting a third pixel to the third signal line and control of connecting the fourth pixel to the fourth signal line in a non-differential mode. Furthermore, a drive unit outputs a signal obtained by amplifying a difference between respective pixel signals of the first and second pixels via one of the first and second signal lines in the differential mode, and outputs respective pixel signals of the first, second, third, and fourth pixels via the first, second, third, and fourth signal lines in the non-differential mode.

Solid-stage image sensor, imaging device, and method of controlling solid-state image sensor

An imaging device includes a plurality of pixels including a first pixel and a second pixel, and a differential amplifier including a first amplification transistor, a second amplification transistor, and a first load transistor. The first load transistor receives a power source voltage. The imaging device includes a first signal line coupled to the first amplification transistor and the first load transistor, a second signal line coupled to the second amplification transistor, and a first reset transistor configured to receive the power source voltage. A gate of the first reset transistor is coupled to the first load transistor. The first pixel includes a first photoelectric conversion element and the first amplification transistor, and the second pixel includes a second photoelectric conversion element and the second amplification transistor.

Solid-state imaging device, control method thereof, and electronic apparatus

The present technology relates to a solid-state imaging element and an imaging apparatus that provides an ample dynamic range. The solid-state imaging element includes a pixel array section and a readout load section. The pixel array section has a readout pixel and a reference pixel. A pixel signal proportional to an amount of incident light is read out from the readout pixel. The reference pixel has characteristics similar to those of the readout pixel. The readout load section forms a differential amplification circuit together with the readout pixel and the reference pixel and inputs, to the reference pixel, a pseudo-dark current signal corresponding to a dark current signal that occurs in the readout pixel, thus canceling the dark current signal. The present technology is applicable to a CMOS image sensor.

Solid-state imaging element and imaging apparatus

To prevent the black dot phenomenon from occurring in a differential amplification-type solid-state image sensor. A signal-side amplifier transistor generates an output voltage corresponding to a signal current corresponding to one of a pair of differential input voltages by supplying the signal current from an output node to a common-phase node. A reference-side amplifier transistor supplies a reference current corresponding to the other one of the pair of differential input voltages to the common-phase node. A constant current source constantly controls a sum of the signal current and the reference current to be merged at the common-phase node. A bypass control unit connects the output node and the common-phase node and supplies the signal current having a value corresponding to a predetermined limit voltage to the common-phase node in a case in which the output voltage reaches the limit voltage.

Growing community of inventors

Kanagawa, Japan

Mamoru Sato