Hitachi, Ltd.

Opnext Japan, Inc.

Mamoru Morita

Hiroshi Moriya

Kisho Ashida

Toshinori Hirataka

Osamu Yokomizo

Yasunori Narizuka

Tsuneaki Kamei

Akira Yabushita

Naoyuki Yamada

Tetsuo Horiuchi

Hiroaki Suzuki

Keiji Mori

There is provided a semiconductor laser element which can change band gap wavelengths without change of composition of a multiple quantum well active layer and a method for fabricating a semiconductor laser module. In the method for fabricating a semiconductor laser element wherein a multiple quantum well active layer is formed on a semiconductor substrate with a crystal growth method, an insulation film is formed at the upper part of the multiple quantum well active layer, an electrode film is moreover formed on the insulation film and at least a part of the electrode film is electrically connected to the multiple quantum well active layer, distortion of the multiple quantum well active layer is controlled in the semiconductor laser element fabrication process after the process of the crystal growth method.

Method for fabricating semiconductor laser element and the same laser element

A semiconductor laser device which ensures high yield, high reliability and high power output by reduction in tensile strain in its active region for improvement in the COD level. The device comprises: a semiconductor crystal-growing portion having an active layer for conversion of electric energy into light energy and a mesa structure protruding on the one side; and an electrode film which is electrically connected with the top face of the mesa structure. The electrode film has a tensile strain and stretches sideward from the mesa structure. In the device, there is a strain control film which is polymerized with the electrode film part stretching sideward from the mesa structure and has a compressive stress.

Semiconductor laser device

An energy supply system includes at least two devices selected from a device for generating electric power, a device for heating a heat conveying medium to an atmospheric temperature or higher and a device for cooling a heat conveying medium to the atmospheric temperature or lower; a device for supplying at least two selected from electric power, heat of atmospheric temperature or higher and cold of atmospheric temperature or lower to a plurality of customers; a device for measuring supply quantities of electric power, heat and cold, supplied to the plurality of customers; a device for calculating usage charges for electric power, heat and cold, consumed by each of the customers on the basis of the supply quantities; and a device for settling the usage charges. One enterprise entity manages these activities.

Energy supply system and operation method thereof

A circuit substrate, such as a thermal printing head, having electrodes made of a material suitable for soldering. The electrode to be soldered, at least in part, is composed of an alloy of Ni and Cu, whose composition ranges from 65 mol % Ni - 35 mol % Cu to 75 mol % Ni - 25 mol % Cu.

Circuit substrate and thermal printing head using the same

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Hiratsuka, Japan

Mamoru Morita