Pioneer Corporation

Pioneer Electronic Corporation

Mamoru Miyachi

Yoshinori Kimura

Hiroyuki Ota

Hirokazu Takahashi

Atsushi Watanabe

Kiyofumi Chikuma

Atsuya Ito

Toshiyuki Tanaka

Isamu Akasaki

Hiroshi Amano

Hitoshi Sato

Atushi Watanabe

An object is to provide a multi-wavelength integrated semiconductor laser device which can reduce variations in emission point distance, can be formed by simplified manufacturing processes, and can provide improve electric characteristics. A first semiconductor laser elementhaving an active layer ALfor emitting a laser beam of a first wavelength from its light-emitting point Xand a second semiconductor laser elementhaving an active layer ALfor emitting a laser beam of a second wavelength from its light-emitting point Xare bonded to each other via an adhesive layer MC made of metal. At least either one of the semiconductor laser elements has a ridge waveguide made of an n-type semiconductor. The semiconductor laser elementsandare bonded via the metal adhesive layer MC at the sides of their respective p-type semiconductors. A submount SUB is bonded to the first semiconductor laser elementvia metal at a side where its ridge waveguide is formed.

Method for manufacturing a multi-wavelength integrated semiconductor laser

A thermoacoustic generating apparatus () is for generating acoustic waves by temperature modulation of solids, and is provided with: a thermoelement layer (); a first electrode layer (), laminated on one surface of the thermoelement layer; and a second electrode layer (), laminated on the other surface of the thermoelement layer.

Thermal sound generating device

This invention provides a semiconductor laser device and method of manufacture with a small interval between light emitting points of laser lights. A first light emitting element having a semiconductor substrate and a laser oscillation section, and a second light emitting element having a laser oscillation section, are brought together with a ridged waveguide of the laser oscillation section facing the ridged waveguide of the laser oscillation section, and then bonded together by virtue of SOGs having a small thickness. A conductive wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, and a wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, are arranged to extend until the insulating layer on the semiconductor substrate. Further, the ohmic electrodes and are formed on the bottom surface of the semiconductor substrate and the top surface of the laser oscillation section, respectively.

Semiconductor laser device and method of manufacturing the same

An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layerof a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrateis provided on the grown layer. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

Semiconductor light-emitting device and fabrication method thereof

An integrated semiconductor light-emitting device suitable for being mounted on a pickup is provided. The integrated semiconductor light-emitting device has a first laser part stacked on a semiconductor substrate and a projection-shaped second laser part formed by stack in thin-film-layer form. The second laser part is fitted into a trench formed adjacent to the first laser part in the semiconductor substrate. At least the first and second laser parts and the trench are bonded together through a metal bonding layer. An emission spot of the first laser part and an emission spot of the second laser part are located away in approximately the same horizontal direction perpendicular to the direction of the stack of the first and second laser parts.

Integrated semiconductor light-emitting device and method for manufacturing same

The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.

Semiconductor light-emitting element and method of manufacturing the same

A semiconductor laser device comprises: a first light-emitting element having a first laser part, an insulating layer, and an ohmic electrode layer; and a second light-emitting element having a second laser part, an insulating layer, and an ohmic electrode layer. The first laser part has a ridge waveguide, and is formed by stacking thin films of group-III nitride compound semiconductors (for example, GaN-based semiconductors). The second laser part has a ridge waveguide, and is formed by stacking thin films of group III&#x2013;V compound semiconductors (such as GaAs). The first laser part and the second laser part are integrally bonded to each other by the interposition of an adhesive metal layer which is formed between the ohmic electrode layers. This provides the semiconductor laser device with a small distance between the light-emitting spots of the laser parts.

An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III&#x2013;V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.

A group-III nitride semiconductor laser device with excellent optical characteristics and its manufacturing method are provided. The method does not include steps that require high assembly precision. The group-III nitride semiconductor laser device comprises a substrate which has a cut-out portion. A laser facet of a multi-layer body is located near the cut-out portion of the substrate.

Nitride semiconductor laser device and method for manufacturing the same

A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa ) In N (0&lE;x&lE;1, 0&lE;y&lE;1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Al Ga In N (0&lE;x&prime;&lE;1, 0&lE;y&prime;&lE;1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Al Ga In N (0&lE;x&Prime;&lE;1, 0&lE;y&Prime;&lE;1) and deposited filling the aperture of the current constricting layer, and a clad layer made of Al Ga In N (0&lE;u&lE;1, 0&lE;v&lE;1) and deposited on the electrode-side guide layer.

Group III nitride compound semiconductor laser and manufacturing method thereof

A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (Al Ga ) .In N (0&lE;&times;&lE;1, 0&lE; &lE;1) doped with a group II impurity element; a step of a second crystal layer made of a group III nitride semiconductor Al Ga N (0.7&lE;z&lE;1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers.

Method for fabricating a group III nitride semiconductor device

The disclosure is a method for fabricating a nitride semiconductor laser device of group-III nitride semiconductor having a substrate. The method includes a step of forming a crystal layer made of a group-III nitride semiconductor (Al,Ga,),In,N (0&lE;x&lE;1, 0&lE;y&lE;1) having an added group II element over the substrate; a step of heating the crystal layer up to a predetermined temperature in a thermal treatment atmosphere and maintaining the predetermined temperature for a first time period; and a step of introducing a hydrocarbon gas into the thermal treatment atmosphere for at least a partial time period within the first time period. The method further includes a step of irradiating an electromagnetic wave or photons to the crystal layer in the at least a partial time period, wherein the electromagnetic wave or photons have an energy greater than an energy forbidden band width of the group III nitride semiconductor in the crystal layer.

Method of fabricating nitride semiconductor laser

A GaN type semiconductor layer in which a group 2 impurity element is added is formed. The GaN type semiconductor layer is heated at a predetermined temperature, while irradiating the semiconductor layer with an electromagnetic wave having an energy larger than the band gap energy of the GaN type semiconductor layer.

Method for manufacturing a semiconductor device

A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

Growing community of inventors

Tsurugashima, Japan

Mamoru Miyachi