Stanley Electric Co., Ltd

Mamoru Miyachi

Koji Matsumoto

Satoshi Tanaka

Tatsuma Saito

Takanobu Akagi

Ryosuke Kawai

Takako Chinone

Takako Hayashi

Yusuke Yokobayashi

Yasuyuki Shibata

Noriko Nihei

Mitsunori Harada

Makoto Sakurai

Takayoshi Yamane

An optical scanning device includes a control unit, a light deflector, light detection units, and a light source. A mirror unit of the light deflector has a flat reflection part for generating scanning light and a groove-shaped reflection part for generating twice reflected light, and performs reciprocating rotation about a rotation axis. The light detection units are disposed at positions on the scanning trajectory of the scanning light where the twice reflected light is received, and are each divided into light detectors in the scanning direction of the scanning light by a division line. The control unit detects the deflection angle θ of the mirror unit based on both the output of the light detector and the output of the light detector.

Optical scanning device which detects a deflection angle of a mirror unit based on outputs from light detectors

A piezoelectric actuator is formed like a rectangular flat plate, and includes a substrate layer, a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order from bottom to top in a thickness direction. The upper electrode layer is constituted of a plurality of electrode segments separated in a surface direction, and connection wires connecting the electrode segments which are adjoining in the surface direction.

Piezoelectric actuator

Provided is an optical deflector that detects an arbitrary deflection angle of a mirror part while avoiding the increase in the length of an optical sensor for detection of the deflection angle. An optical deflectorcomprises: a mirror partthat has a flat reflection surfaceand a grooved reflection surface, each of the flat reflection surfaceand the grooved reflection surfacereflecting an incident light; and an actuatortothat reciprocally turns the mirror partabout a rotation axis. The grooved reflection surfacehas a plurality of longitudinal groovesthat extends parallel to the rotation axis. Each longitudinal groovehas a facing inclination surfacethat is parallel to the rotation axisand that has at least an opening-side portion of a facing inclination surface of a V-groove.

Optical deflector including rotatable mirror part having flat and grooved reflection surfaces, and optical scanning apparatus

There is provided an irradiation apparatusincluding a laser light source, a light deflector, and a control unit. The light deflectorhas a piezoelectric actuatorthat include a plurality of piezoelectric cantileversin a meandering pattern arrangement. In the control unit, the driving voltage control unitstops supplying a driving voltage to some piezoelectric cantileverswhen a designated drawing area designated by the drawing area designating unitis an upper drawing area Fu and a lower drawing area Fd that are partial drawing areas.

Irradiation apparatus

The light-emitting device of the present invention includes: a support; a plurality of light-emitting elements arranged in a row on the support; and a conductor trace portion configured from a plurality of conductor traces which extend on the support from one end portion of the row to the other end portion of the row which are each electrically connected to each of the plurality of light-emitting elements. Each of the plurality of conductor traces is configured such that the trace width in the direction of extension in a region under one light-emitting element to which the conductor trace is electrically connected is greater than the trace width in a region extending in the direction of extension side by side with a conductor trace connected to a light-emitting element disposed closer to the one end portion than the one light-emitting element is.

Light-emitting device

A semiconductor light-emitting element comprises: a semiconductor structure layer including a first semiconductor layer having a first conductivity type, a light-emitting layer and a second semiconductor layer having a second conductivity type opposite to the first conductivity type being laminated in sequence; a first electrode including a first electrode layer formed on the first semiconductor layer and a first contact electrode connected to the first electrode layer at a position displaced from a center of the first electrode layer in an intra-layer direction of the first electrode layer; and a second electrode extending through the first electrode layer, the first semiconductor layer and the light-emitting layer and being connected to the second semiconductor layer.

Semiconductor light-emitting element and semiconductor light-emitting device

A light-emitting diode apparatus includes a support substrate; and a light-emitting diode array formed of multiple light-emitting diodes arranged two-dimensionally on the support substrate, constituting a light distribution center having a highest brightness in the light-emitting diode array, wherein the multiple light-emitting diodes are divided into a plurality of control units, drive currents of which can be individually controlled, wherein the plurality of control units include a plurality of composite control units in each of which a plurality of light-emitting diodes are connected in series, and wherein among the plurality of light-emitting diodes in each of the composite control units, a light-emitting diode which is positioned farther from the light distribution center has a larger light-emitting area than that of a light-emitting diode which is positioned nearer from the light distribution center.

Light-emitting diode apparatus

A semiconductor light-emitting device comprises an optical semiconductor multilayer disposed above a support substrate, which has a structure in which a first semiconductor layer having a first conductivity type, an active layer having light emitting properties, and a second semiconductor layer having a second conductivity type different from the first conductivity type are sequentially stacked from the support substrate side, in which a groove, which has a height exceeding at least the active layer from the support substrate side, is formed along an outer edge of the optical semiconductor multilayer, and which includes an external region being a region further outside than the groove, an inner region being a region further inside than the groove, and a connection region corresponding to a region where the groove is provided, in plan view.

Semiconductor light-emitting device and semiconductor light-emitting device array

A lightening apparatus includes light-emitting elements arranged in a matrix. One of the light-emitting elements is located at each intersection between at least two first reference voltage lines and 'n' first drive voltage lines. A first reference voltage driver time-divisionally switches the first reference voltage lines. A first drive voltage driver supplies first luminous drive voltages to the first drive voltage lines. One of the light-emitting elements is located at each intersection between at least one second reference voltage line and 'n' second drive voltage lines. A second reference voltage driver switches the second reference voltage line. A second drive voltage driver supplies second luminous drive voltages to the second drive voltage lines.

Lightening apparatus having matrix-arranged light-emitting elements

Provided are a highly reliable semiconductor light-emitting element having uniform protrusions that are arranged regularly and have the same size and a method of producing the same. The method of producing a semiconductor light-emitting element according to the present invention includes: forming a mask layer having a plurality of openings that are arranged at equal intervals along a crystal axis of a semiconductor structure layer on the surface of the semiconductor structure layer; performing a plasma treatment on the surface of the semiconductor structure layer exposed from the openings in the mask layer; removing the mask layer; and wet-etching the surface of the semiconductor structure layer to form protrusions on the surface of the semiconductor structure layer.

Method for manufacturing semiconductor light-emitting element

A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.

Semiconductor light emitting apparatus

A method of manufacturing a semiconductor element includes forming a first bonding layer containing a metal, which forms a eutectic crystal with Au, on a first substrate to provide a first laminated body. The method also includes forming an element structure layer having a semiconductor layer on a second substrate. The method also includes forming a second bonding layer on the element structure layer to provide a second laminated body. The second bonding layer has a metal underlayer containing a metal, which forms a eutectic crystal with Au. The second bonding layer also has a surface layer that contains Au. The method also includes performing heating pressure-bonding on the first and second laminated bodies with the first and second bonding layers facing each other. The heating temperature of the second substrate in the heating pressure-bonding is higher than the heating temperature of the first substrate.

Semiconductor element and method of manufacturing same

A semiconductor light emitting element array contains: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including; a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of adjacent semiconductor laminations.

Semiconductor light emitting element array

A semiconductor light emitting element has a cross-sectional structure comprising a support substrate, a semiconductor lamination located over the support substrate, and a joint layer located between the semiconductor lamination and the support substrate, containing a first jointing layer located on the semiconductor lamination side and a second jointing layer located on the support substrate side. In the plan view, the semiconductor lamination has corner portions and side portions along the periphery, the first jointing layer is encompassed by the second jointing layer, the second jointing layer is encompassed by the semiconductor lamination, and an annular region defined between outlines of the semiconductor lamination and of the first jointing layer has first portions corresponding to the corner portions of the semiconductor lamination and second portions corresponding to the side portions of the semiconductor lamination, widths of the first portions being narrower than widths of the second portions.

Semiconductor light emitting element

An LED device includes first and second LED elements containing a lower layer of first conductivity type, an active layer, and an upper layer of second conductivity type, wherein the second LED element has third and fourth electrodes on the lower layer, recessed portion having a side surface exposing the upper, active and lower layers, and reaching the third electrode, fifth electrode disposed on the upper layer extending on the side surface of the recessed portion, and connected with the third electrode, and groove extending from the upper layer and reaching the active layer between the third and fourth electrodes to electrically separate the third electrode from the fourth electrode.

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Okegawa, Japan

Mamoru Miyachi