Agc Inc.

Mamoru Isobe

Kohei Horiuchi

Shigetoshi Mori

Motoshi Ono

Nobuhiro Nakamura

Teruo Fujiwara

Kazunobu Maeshige

Masahiro Kishi

Takahiro Mashimo

Naoto Kihara

A method of producing a glass substrate having a hole is provided. The method includes preparing the glass substrate having a first surface and a second surface facing each other; forming a hole in the glass substrate with a laser; and annealing the glass substrate placed on a first support substrate having a thermal expansion coefficient whose difference from a thermal expansion coefficient of the glass substrate is less than or equal to 1 ppm/K, where the first support substrate is placed on a second support substrate having a thermal expansion coefficient of less than or equal to 10 ppm/K.

Method of producing glass substrate having hole and glass laminate for annealing

A glass substrate for a semiconductor package includes a first principal surface, a second principal surface, at least one hollowed-out portion, and at least one through hole formed in a surrounding of the at least one hollowed-out portion, wherein in a section of the at least one hollowed-out portion taken in a direction perpendicular to the first principal surface, a minimum diameter of the at least one hollowed-out portion is smaller than an opening diameter of the at least one hollowed-out portion at each of the first principal surface and the second principal surface.

Glass substrate having through hole and hollowed-out portion and method for producing the same

A glass substrate includes a first surface and a second surface that are opposite to each other. Multiple through holes pierce through the glass substrate from the first surface to the second surface. Each of five through holes randomly selected from the multiple through holes includes a first opening at the first surface and a second opening at the second surface. The approximate circle of the first opening has a diameter greater than a diameter of the approximate circle of the second opening. The first opening has a roundness of 5 &#x3bc;m or less. Perpendicularity expressed by P=t/tranges from 1.00000 to 1.00015, where P is the perpendicularity, tis the distance between the center of the approximate circle of the first opening and the center of the approximate circle of the second opening, and tis the thickness of the glass substrate.

Glass substrate

A translucent substrate includes a glass substrate containing at least one element selected from a group consisting of Bi, Ti and Sn; a coating layer formed on the glass substrate; and a transparent conductive film formed on the coating layer, wherein the coating layer is deposited by a dry depositing method.

Translucent substrate, organic LED element and method of manufacturing translucent substrate

A method of manufacturing a glass substrate that has a through hole, includes (1) forming an initial hole in a glass substrate by irradiating laser light from a first surface side of the glass substrate; (2) performing a first etching process using a first etching solution to form, from the initial hole, a first through hole that extends from a first opening formed at a first surface to a second opening formed at a second surface, and to make a ratio 'd/R' of a thickness 'd' of the glass substrate with respect to a diameter &#x201c;R&#x201d; of the first opening to be within a range between 10 to 20; and (3) performing a second etching process to enlarge the first through hole using a second etching solution, whose etching rate with respect to the glass substrate is faster than that of the first etching solution.

Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole

A glass substrate includes a plurality of through holes that penetrate from a first surface to a second surface of the glass substrate. Each through hole has an upper aperture with a first diameter on the first surface and a lower aperture with a second diameter on the second surface. For each of ten through holes selected from the plurality of through holes, a side wall length is obtained from the first and second diameters and the thickness of the glass substrate, and an R value is obtained by dividing the side wall length by the thickness of the glass substrate. The R values fall within a range of 1 to 1.1. A B value, obtained from dividing a difference between the greatest R value and the smallest R value by an average of the R values followed by multiplication with 100, is 5% or less.

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Chiyoda-ku, Japan

Mamoru Isobe