Renesas Electronics Corporation

Mami Toda

Shintaro Yamamichi

Toshihiro Iizuka

Tomoe Yamamoto

In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO, HfO, (Zr, Hf)O(0&#x3c;x&#x3c;1), (Zr, Ti)O(0&#x3c;y&#x3c;1), (Hf, Ti)O(0&#x3c;z&#x3c;1), (Zr, Ti, Hf)O(0&#x3c;k, l, m&#x3c;1, k+l+m=1), by an atomic layer deposition process. The thin film transistor thus formed has a minimized leakage current and an increased capacitance.

Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)

In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO, HfO, (Zr, Hf)O(0&#x3c;x&#x3c;1), (Zr, Ti)O(0&#x3c;y&#x3c;1), (Hf, Ti)O(0&#x3c;z&#x3c;1), (Zr,Ti, Hf)O(0&#x3c;k, l, m&#x3c;1, k+l+m=1), by an atomic layer deposition process. The thin film transistor thus formed has a minimized leakage current and an increased capacitance.

Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structure

A semiconductor device having a logic section and a memory section that are formed on the same semiconductor chip, including: a first transistor formed in the logic section and having gate electrodes and source and drain regions, and a second transistor formed in the memory section having gate electrodes, source and drain regions and a capacitor, the capacitor being of a MIM structure and having an upper and a lower metal electrode and a capacitor dielectric film sandwiched therebetween, the capacitor dielectric film being formed of a dielectric material which is selected from the group consisting of ZrO2, Hf92, (Zrx, Hf1-x)O2 (0&#x3c;x&#x3c;1), (Zry, Ti1-y)o2 (0&#x3c;y&#x3c;1), (Hfz, Ti1-z)92 (0&#x3c;z&#x3c;1 and (Zrk, Til, Hfm)o2 (0&#x3c;k, l, m&#x3c;1, k+l+m&#x2212;1), wherein each of the first and second transistors has a refractory metal silicide layer formed over each of the source and drain regions thereof and the lower metal electrode is connected through a metal plug to the refractory metal silicide layer formed over one of the source and drain regions of the second transistor.

Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0&#x3c;x&#x3c;1), (ZRy, Ti (O&#x3c;y&#x3c;1), (Hfz, Ti-z)O2 (O&#x3c;z&#x3c;1) and (Zrk, Ti1, Hfm)O2 (O&#x3c;K, 1, m&#x3c;1, K+1+m=1)

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Mami Toda