Kao Corporation

Mami Shirota

Yasuhiro Yoneda

Seiji Muranaka

Itaru Kanno

Kozo Kitazawa

Eiji Kashihara

Junji Kondo

Eiji Nagoshi

A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuK&#x3b1;1 ray (&#x3bb;=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2&#x3b8; (&#x3b8; is a Bragg angle) range of 28.61 to 29.67&#xb0;, a peak (second peak) having a peak top in a diffraction angle 2&#x3b8; range of 33.14 to 34.53&#xb0;, a peak (third peak) having a peak top in a diffraction angle 2&#x3b8; range of 47.57 to 49.63&#xb0;, and a peak (fourth peak) having a peak top in a diffraction angle 2&#x3b8; range of 56.45 to 58.91&#xb0;. A half-width of the first peak is 0.8&#xb0; or less.

Polishing liquid composition

A polishing composition containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a polishing process of a semiconductor substrate, including the step of polishing a semiconductor substrate with a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a method for manufacturing a semiconductor device including the step of polishing a semiconductor substrate having a film formed on its surface, the film containing a silicon atom and having a shape with dents and projections, with a polishing pad pressed against a semiconductor substrate at a polishing load of from 5 to 100 kPa in the presence of a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium.

Polishing process of a semiconductor substrate

A stripping agent composition for a resist, containing (A) 0.1 to 10% by weight of an amine; (B) 80 to 99% by weight of an organic solvent having a Hansen's solubility parameter of from 18 to 33 MPa; (C) 0.01 to 3% by weight of a sugar; and (D) 0 to 5% by weight of water; a method for stripping a resist, including the step of stripping the resist with the stripping agent composition; and a method for manufacturing a semiconductor device, including the step of stripping a resist with the stripping agent composition. By using the stripping composition of the present invention, for example, a high-quality IC or LSI semiconductor device circuit, especially a compound semiconductor device circuit can be more economically advantageously manufactured.

Stripping agent composition for a resist

Resist residues, which is formed in a process of forming Al interconnections, are removed through use of a single chemical. A chemical which contains an organic acid or a salt thereof and water and which has a pH below 8 is used as a treatment for removing resist or resist residues. The chemical may be used in a process in which Al, W, Ti, TiN, and SiO are exposed on the surface of a wafer after etching of an Al interconnection; in a process in which Al, W, Ti, TiN, and SiO are exposed on the surface of a wafer after etching a hole reaching an Al interconnection in an dielectric layer; in a process in which Cu is exposed on the surface of a semiconductor wafer after dry-etching of a Cu interconnection or etching of an interlayer dielectric film laid on a Cu interconnection; and in a process in which metal material such as W, WN, Ti, or TiN; poly-Si; SiN; and SiO are exposed on the surface of a wafer after etching of a metal gate.

Method of manufacturing semiconductor device with improved removal of resist residues

A stripping composition for a resist comprising a polycarboxylic acid and/or a salt thereof, and water, wherein a pH of the stripping composition is less than 8; and a stripping composition for a resist comprising 0.01 to 90% by weight of an organic acid and/or a salt thereof, 2 to 74% by weight of water, and 0.5 to 90% by weight of an organic solvent, wherein a pH of the stripping composition is less than 8; and a method of stripping a resist from a substrate, comprising applying one of the stripping composition to the substrate.

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Wakayama, Japan

Mami Shirota