Kabushiki Kaisha Toshiba

Mami Saito

Hiroshi Tomita

Soichi Nadahara

Yoshihiro Ogawa

Hisashi Okuchi

Hiroyasu Iimori

Takashi Sudo

Yasuhiro Kanishima

Kunihiro Miyazaki

Kikuo Yamabe

According to one embodiment, an electronic device includes a biological information acquisition processor, a body condition estimation processor, and a motion change detector. The biological information acquisition processor acquires biological information of a living body including information about the living body. The body condition estimation processor estimates a body condition of the living body based on the biological information. The motion change detector detects a motion change of the living body based on the biological information. The body condition estimation processor corrects a reference value used during body condition estimation or changes a body condition estimation method based on the motion change of the living body.

Electronic device, system, and body condition estimation method

An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device

A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H SO and NH F or H SO and HF as main components, and having an H O content set to 5 wt % or lower. Moreover, a method of manufacture of semiconductor devices is disclosed, which includes selective etching an SiN film by using a mixed solution of H SO and H O, or an etching solution obtained by adding a small amount of hydrofluoric acid to the mixed solution.

Etching for manufacture of semiconductor devices

A semiconductor device includes a semiconductor substrate having first and second main surfaces and including a denuded zone, in which an oxygen concentration is lower than that in an inner portion of the semiconductor substrate and which does not include a bulk microdefect, and an intrinsic gettering zone, an element region formed on the first surface of the semiconductor substrate, and an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, and formed directly on at least a portion of the intrinsic gettering region or the denuded zone entirely or partially thinned of the second main surface of the semiconductor substrate. A method for manufacturing a semiconductor device includes the steps of forming an element region on a first main surface of a semiconductor substrate having first and second main surfaces and having an intrinsic gettering zone, and forming an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, directly on at least a portion of the intrinsic gettering region of the second main surface of the semiconductor substrate.

Growing community of inventors

Yokohama, Japan

Mami Saito