Freescale Semiconductor,inc.

Mall Mahalingam

Alexander James Elliott

Scott Duncan Marshall

Pierre-Marie J Piel

Robert J McLaughlin

The disclosures made herein relate to RF power semiconductor devices. In accordance with one embodiment of the disclosures made herein, a RF power plastic semiconductor device comprises a semiconductor (RF) device, a Low Temperature Co-Fired Ceramic (LTCC) impedance matching structure electrically connected to the RF device and a plastic package body formed over the RF device and the impedance matching structure. The LTCC impedance matching structure comprises a metallized layer overlying a major body portion of the impedance matching structure and comprises a passivation layer on the metallized layer. The passivation layer enhances bond strength of a mold compound of the plastic package body to the metallized layer. Portions of the metallized layer are exposed through the passivation layer for enabling electrical interconnects to be formed between the LTCC impedance matching structure and the RF device. Preferably, RF power plastic packages in accordance with embodiments of the disclosures made herein exhibit terminal impedance of at least about twice that of conventional RF power plastic packages.

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Scottsdale, AZ, United States of America

Mall Mahalingam