Leland Stanford Junior University

Malcolm R Beasley

Robert H Hammond

Martin M Fejer

Theodore H Geballe

Kookrin Char

Aharon Kapitulnik

Byungdu Oh

Dojun Youm

Andy Kent

Weizhi Wang

Steven J Benerofe

Michio Naito

Charles H Ahn

A magnetoresistive memory element utilizing an enhanced proximity effect of ferromagnetic layers (ML) in a tri-layer configuration. A oscillatory decay characteristic of the pair wavefunction is expanded by using materials for the ML with a low Curie temperature and a small exchange field. As a result, the sum magnetic field of the alternetingly parallel and anti-parallel magnetized ML changes the critical temperature of the superconductor below and above the operational device temperature such that a passing read pulse remains unaltered at one of the two logical conditions stored within the device.

Superconducting magnetoresistive memory element using controlled exchange interaction

An atomic absorption apparatus using a laser for producing a light beam having a characteristic frequency f, typically ranging from several MHz to several GHz, and a characteristic polarization for measuring the absorption of that light beam by atoms of interest. The apparatus has a modulator to generate a modulating signal to modulate the characteristic frequency f and produce a phase-modulated light beam. The apparatus includes a domain where the specific atoms are located. This domain is positioned in the path of the phase-modulated light beam such that the phase-modulated light beam encounters the specific atoms when passing through the domain and some of the specific atoms absorb a portion of the phase-modulated light beam. Typically, the domains containing the atoms of interest include process chambers for vacuum coating, ion milling, sputtering, mass spectroscopy vapor coating or deposition, and the like. The amount of light absorbed depends on the motion of the atoms relative to the phase-modulated light beam.

Atomic absorption apparatus using a phase-modulated light beam

A method of forming a superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x thin film with selected crystal orientation is described which comprises the steps of sputtering simultaneously Y, Ba and Cu onto the surface of a substrate, introducing oxygen at said surface during deposition, controlling the stoichiometry of the elements Y, Ba or both richer or poorer than the 1:2:3 stoichiometry within a few atom percent and followed by annealing to selectively grow an a-axis or a c-axis oriented film of YBa.sub.2 Cu.sub.3 O.sub.7-x.

Method of forming superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x thin

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Palo Alto, CA, United States of America

Malcolm R Beasley