Applied Materials, Inc.

Malcolm J Bevan

Theresa Kramer Guarini

Wei Liu

Bernard Lloyd Hwang

Lara Hawrylchak

Johanes F Swenberg

Kin Pong Lo

Matthew S Rogers

Christopher Sean Olsen

Benjamin Colombeau

Patricia M Liu

Vladimir Nagorny

Steven C H Hung

Jeffrey A Tobin

Rene George

Johanes S Swenberg

Roger Curtis

Swayambhu Prasad Behera

Jacob Abraham

Jian Li

Son Truong Nguyen

Abhishek Dube

Canfeng Lai

Yoshitaka Yokota

Tatsuya E Sato

Jose Antonio Marin

Linlin Wang

Houda Graoui

Steven C Hung

Udayan Ganguly

Sheng-Chin Kung

Philip A Bottini

Andy Lo

Byeong Chan Lee

Huy Q Nguyen

David P Thompson

Steven Verhaverbeke

Jeffrey W Anthis

Roman Gouk

Maitreyee Mahajani

Vladimir Zubkov

Ken Kaung Lai

Jian Wu

David Chu

Shih-Chung Chen

Charles Chu

One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.

Methods for calibrating an optical emission spectrometer

Embodiments described herein generally relate to a method and apparatus for fabricating a chamber component for a plasma process chamber. In one embodiment a chamber component used within a plasma processing chamber is provided that includes a metallic base material comprising a roughened non-planar first surface, wherein the roughened non-planar surface has an Ra surface roughness of between 4 micro-inches and 80 micro-inches, a planar silica coating formed over the roughened non-planar surface, wherein the planar silica coating has a surface that has an Ra surface roughness that is less than the Ra surface roughness of the roughened non-planar surface, a thickness between about 0.2 microns and about 10 microns, less than 1% porosity by volume, and contains less than 2Eatoms/centimetersof aluminum.

Process chamber process kit with protective coating

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

Film thickness uniformity improvement using edge ring and bias electrode geometry

Edge ring

Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-κ layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-κ layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

Gate all around I/O engineering

Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Method and apparatus for selective nitridation process

Processing methods may be performed to produce semiconductor structures. The methods may include forming a silicon layer over a semiconductor substrate. The forming may include forming a silicon layer incorporating a dopant. The methods may include oxidizing a portion of the silicon layer while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The oxidizing may drive a portion of the dopant through the silicon layer and into the semiconductor substrate.

Gate interface engineering with doped layer

Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-&#x3ba; layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-&#x3ba; layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.

Cap oxidation for FinFET formation

A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.

Thin film treatment process

Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.

Treatments to enhance material structures

Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.

Plasma treating a process chamber

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Santa Clara, CA, United States of America

Malcolm J Bevan