Asml Netherlands B.v.

Maksym Yuriiovych Sladkov

Johannes Jacobus Matheus Baselmans

Marcus Adrianus Van De Kerkhof

Jozef Maria Finders

Pieter-Jan Van Zwol

Laurentius Cornelius De Winter

Robbert Jan Voogd

Wouter Joep Engelen

Pieter Cristiaan De Groot

Gerard Frans Jozef Schasfoort

Manfred Petrus Johannes Maria Dikkers

Stefan Michael Bruno Baumer

Engelbertus Antonius Fransiscus Van Der Pasch

Alexander Viktorovych Padiy

Carolus Johannes Catharina Schoormans

Andreas Johannes Antonius Brouns

Johannes Aldegonda Theodorus Marie Van Den Homberg

A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.

Patterning device

A lithographic method for measuring a position of a target grating with a mask sensor apparatus which comprises a plurality of detector modules each comprising a diffraction grating located at a mask side of a projection system of a lithographic apparatus and an associated detector, the method comprising a first step of measuring first intensities of a combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along a first direction; a second step of displacing the mask sensor apparatus relative to the target grating in a second direction, wherein a size of the relative displacement is proportional to a spatial frequency of a potential error; and a third step of measuring second intensities of the combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along the first direction.

Lithographic method and apparatus

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Veldhoven, Netherlands

Maksym Yuriiovych Sladkov