Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Panasonic Automotive Systems Co., Ltd.

Makoto Yarino

Yoshiyuki Matsunaga

Takahiro Yamamoto

Shigeru Furumiya

Hiroshi Iwai

Michihiro Yamagata

Toshiya Fujii

Tomokuni Iijima

Mitsuhiko Otani

Haruka Takano

Shoji So

Manabu Yumine

Yutaka Sonoda

Yoshimitsu Noguchi

Yusuke Nihei

A detection system includes: an obtainer that obtains image data generated based on an amount of light received by each of a plurality of pixels from a detection target and event data generated based on a change in an amount of light received by each of a plurality of pixels from the detection target; a processor that extracts, from the event data as auxiliary information, information to be used to assist in detecting the detection target from the image data; and a detector that detects the detection target or a state of the detection target based on at least the image data and the auxiliary information.

Detection system and detection method

A distance-measuring imaging device includes: a drive control unit; a light source unit; an image processing unit including light receiving units and charge reading units arranged one-to-one; and an image processing unit. The charge reading units are arranged partly at the left side of corresponding ones of the light receiving units and partly at the right side of corresponding ones of the same. In each of a period in which the exposure is performed when the exposure control signal is received after a first delay time since when the light emission control signal is received and a period in which the exposure is performed when the exposure control signal is received after a second delay time longer than the first delay time, since when the light emission control signal is received, the left-side charge reading units read charge leftward, and the right-side charge reading units read charge rightward.

Distance-measuring imaging device and solid state imaging element

A solid-state imaging device including pixels, each pixel having a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit. The photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on the surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on the surface of the photoelectric conversion film that is opposite to the pixel electrode, and the amplitude of a row reset signal applied to the gate of the reset transistor is smaller than at least one of (a) the maximum voltage applied to the drain of the amplification transistor, (b) the maximum voltage applied to the gate of the selection transistor, (c) the power source voltage applied to an inverting amplifier, and (d) the maximum voltage applied to a transparent electrode.

Solid-state imaging device

A solid-state imaging device according to the present invention includes: a semiconductor substrate; a plurality of pixels disposed on the semiconductor substrate in rows and columns; a column signal line formed for each of the columns; an inverting amplifier connected to the column signal line; and a feedback line, provided for each of the columns, to feed back output signal of the inverting amplifier to pixels in a corresponding column, wherein the amplifying transistor includes a gate connected to the pixel electrode and outputs signal voltage corresponding to the pixel electrode to a column signal line via the selection transistor, and one of a source and a drain of the reset transistor is connected to the pixel electrode and the other is connected to a corresponding feedback line.

Solid-state imaging device, and method for driving the same

Growing community of inventors

Kyoto, Japan

Makoto Yarino