Mitsubishi Denki Kabushiki Kaisha

Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Other

National Institute of Advanced Industrial Science and Technology

Kabushikikaisha Shofu

Panasonic Liquid Crystal Display Co., Ltd.

Shofu Inc.

Makoto Yamamoto

Keisuke Koga

Kazuo Kobayashi

Akinori Shiota

Seigo Kanemaru

Masayoshi Nagao

Kiyohiko Sakakibara

Tsuyoshi Toyama

Keiichi Fujii

Shigeto Suzuki

Kunio Tani

Ryuichi Matsuo

Susumu Takeuchi

Shuichi Takehana

Tomohisa Iba

Kazuhiro Shimomura

Kennichi Iijima

Yukio Nakamoto

Shinichi Kobayashi

Eiji Suematsu

Kenji Noguchi

Yoshinao Taketomi

Noriyuki Negoro

Hikaru Nishitani

Tomoyuki Inoue

Satoshi Azuhata

Ryohei Kondo

Kouji Shou

Hirokazu Harima

Yukuo Kuze

Kazuo Hirabayashi

Ryo Ando

Junichi Kimiya

Masato Nakakita

Ryuichi Yosimoto

Masuhito Yasui

A communication controller includes a position-information acquiring unit, a movement-information acquiring unit, a selector, and a determination unit. The position-information acquiring unit acquires position information of each of a plurality of base-station devices. The movement-information acquiring unit acquires movement information of a terminal device. The selector selects, as a handover candidate, at least one base-station device from among the plurality of base-station devices in accordance with the position information and the movement information. The determination unit determines a base-station device that is a handover destination, in accordance with a result of a cell search performed on the at least one base-station device selected by the selector.

Communication controller, terminal device, and base-station device

A method of estimating and restoring includes: determining a temporary finish line having multiple points on scan data as an imaginary boundary line between a formed portion and an unformed portion of the abutment tooth or abutment tooth model; deleting the scan data including the temporary finish line in an edge portion of the abutment tooth or abutment tooth model; extending, in a portion in which the scanned data is deleted, a crown-side temporary finish line and a root-side temporary finish line in directions supplementing the deleted portion of the scan data, respectively; and estimating and restoring the finish line of the edge portion which is formed on the outer side than the edge portion of the deleted scan data based on the extended crown-side temporary finish line and the extended root-side temporary finish line.

Method of estimating and restoring abutment tooth form changed by scanning and program thereof

A communication system includes a base station apparatus, a mobile station apparatus, and a communication device. The base station apparatus performs communication with one or a plurality of the communication devices via the mobile station apparatus. The mobile station apparatus includes a first mobile station communicator that performs first communication with the base station apparatus, a second mobile station communicator that performs second communication with the communication device, and a mobile station controller that acquires a device type of the communication device and, on the basis of the device type thus acquired, generates request information for requesting the base station apparatus for a communication control configuration of the first communication. The base station apparatus includes a base station controller that, in accordance with the request information, configures communication control appropriate to the device type of the communication device over the first communication with the mobile station apparatus.

Communication system, mobile station apparatus, base station apparatus, communication device, and communication method

A manufacturing method of a liquid crystal display device including a first substrate and a second substrate each including a flexible board, the manufacturing method includes a first step of forming the flexible board by forming, in a first region on a glass substrate, a first resin unit made of a first resin having a property of absorbing infrared light and forming, in a second region on the glass substrate, a second resin unit made of a second resin smaller in infrared absorptivity than the first resin; and a second step of, subsequent to the first step, irradiating the first resin unit with infrared light to cut a portion corresponding to the first region in the flexible board.

Manufacturing method of liquid crystal display device

In a shade guide, a plurality of shade tabs whose colors are mutually different are arranged regularly based on the colors. The arrangement of the plurality of shade tabs is an arrangement determined based on: S values and V values that are determined according to to which areas, from among areas partitioned by a plurality of straight lines in an L*-C* plane, the coordinates of the colors of the shade tabs belong, and H values that are determined according to to which areas, from among areas partitioned by a plurality of straight lines in an a*-b* plane, the coordinates belong. S groups, each of which is a shade tab group having a common S value, are arranged in the shade guide. V rows, each of which is a shade tab group having a common V value, are arranged in each S group. In each V row, the plurality of shade tabs have mutually different H values and are aligned in an order that is in accordance with the H values. Using this shade guide enables precisely and easily discriminating the color of an evaluation target tooth.

Shade guide, method for discriminating tooth colors, artificial tooth manufacturing method

A matrix-type cold-cathode electron source device includes: an emitter array () in which a plurality of emitters are arranged, and a gate electrode () opposed to the emitter array (). The gate electrode () includes: an emitter area gate electrode () opposed to the emitter array (); a gate address electrode () connecting the emitter area gate electrode () to a gate signal wire (); and a high-resistance area () disposed between the gate address electrode () and the emitter area gate electrode ().

Matrix-type cold-cathode electron source device

A matrix-type cold-cathode electron source device includes a mesh structure () on which through-holes () are formed and drive portions (). The through-hole () has an opening diameter of 1/N or less of the alignment pitch of electron source elements () and the drive portions () drive the mesh structure () every 1/N of the alignment pitch of the electron source elements (). Thus it is possible to increase a resolution without reducing the size of an electron source.

An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a mesh structure and reaches a target. Each of the plurality of through holes in the mesh structure has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The mesh structure is formed of a silicon-containing material doped with a N-type or P-type material. In this way, it is possible to suppress a decrease in the amount of the electron beam reaching the target while securing a mechanical strength of an electrode provided with a large number of through holes, and suppress expansion of the electron beam on the target.

Mesh structure and field-emission electron source apparatus using the same

The present invention detects whether the supply voltage applied to the power supply terminal () is used for the dynamic speaker or for the piezoelectric speaker by the power supply voltage detection circuit (), switches the gain of the amplifier circuit () in accordance with the detection result by the gain switching circuit () so that the same output power is produced for the same input signal in the respective speaker driving, and amplifies the input signal from the input terminal () by the amplifier circuit () having the gain to drive a speaker () that is connected to the output terminals ().

Speaker driving device and audio output system

An amplifier includes: a single-stage or multiple-stage variable gain amplifier that amplifies an input signal with a controlled gain; a AGC control circuit that detects the peak level of a signal outputted from the variable gain amplifier in the final stage, converts the resultant signal to a digital signal, and outputs an AGC control signal for controlling the gain of the variable gain amplifier based on the converted digital signal; an EVR control circuit that outputs an EVR control signal according to a signal of setting an attenuation value or an amplification value for EVR inputted from an electronic variable resistor control terminal; and a gain control circuit that controls the gain of the variable gain amplifier in accordance with at least one of the AGC control signal and the EVR control signal. The occurrence of 'popping' sounds caused by differences in DC voltage due to switching between an AGC circuit and an electronic variable resistor circuit can be suppressed.

Amplifier

The semiconductor integrated circuit includes a constant voltage regulatorgenerating a predetermined constant voltage from an external power supply, an inverting charge pump circuitusing the output of the constant voltage regulator as its power supply, and an amplifier circuitusing the negative voltage outputted by the charge pump circuit as a reference voltage. The output voltage of the constant voltage regulator is set so that a potential difference between the output voltage of the constant voltage regulator and the output voltage of the charge pump circuit is not to exceed a withstand voltage of the amplifier circuit, and power is supplied to the constant voltage regulator and amplifier circuit from a single external power supply. Even if the voltage of the external power supply increases, the negative voltage output of the charge pump circuit does not change, permitting an increase in the maximum value of the external power supply voltage with account taken of the withstand voltage.

Semiconductor integrated circuit

A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

Field-emission electron source, method of manufacturing the same, and image display apparatus

An NchMOS transistor () is provided for muting of an output terminal () to which positive and negative output signals are outputted, and a mute switch circuit () is provided for controlling on/off of the transistor () by switching a voltage applied to the gate of the transistor (). When muting is turned off, the back gate of the transistor () is biased by resistance division between resistors (Rand R) connected in series between the output terminal () and a predetermined negative potential (VSS).

Mute circuit

In a BTL amplifier of the present invention, between first and third transistor parts which are laterally adjacent, directions of semiconductor regions are parallel. Between the first and second transistor parts and the third and fourth transistor parts, each which are longitudinally adjacent, directions of semiconductor regions are perpendicular. The first and the third transistor parts are connected to a power supply terminal through a first wire. The second and the fourth transistor parts are connected to a ground terminal through a second wire. The first and the second transistor parts are connected to a first output terminal through a third wire. The third and the fourth transistor parts are connected to a second output terminal through a fourth wire.

BTL amplifier

A high frequency semiconductor apparatus is provided which prevents characteristics of a high frequency semiconductor element from being deteriorated so that the high frequency semiconductor element can be made to operate stably. The high frequency semiconductor apparatus is so configured that heat generated by a high frequency semiconductor element is sequentially conducted through a grounding via hole to a first ground layer, a first via hole, a first ground sublayer, a bonding material layer, a second ground layer, a second via hole, and a third ground layer.

Growing community of inventors

Hyogo, Japan

Makoto Yamamoto