Mitsubishi Materials Corporation

Makoto Urushihara

Hideaki Sakurai

Kazuki Mizushima

Shintaro Iida

Wataru Saiki

Yasuhiko Kudo

An insulated copper wire is an insulated copper wire having a copper wire and an insulating film coating a surface of the copper wire, in which the insulating film contains a polymer material having an amide bond, on a peeled surface formed on a surface of the insulated copper wire by peeling off the insulating film, there more copper atoms bonded to a nitrogen atom or a carbon atom than copper atoms bonded to an oxygen atom, an oxygen-containing layer containing 10 atom % or more of oxygen in a depth direction from the peeled surface is formed, and a film thickness of the oxygen-containing layer is in a range of 2 nm or more and 30 nm or less. An electric coil is formed by winding the above-described insulated copper wire.

Insulated copper wire and electric coil

There is provided an insulated electric wire formed by covering a rectangular conductor wire having a rectangular cross-sectional shape with an insulating film. The insulating film is formed of an inner layer covering a surface of the rectangular conductor wire, and an outer layer covering a surface of the inner layer. A thickness (t) of a section of the inner layer, which covers one short side of two facing short sides of the same length of a rectangular cross section of the rectangular conductor wire, is greater than a thickness (t) (including that t=0) of a section of the inner layer which covers the other short side. An elastic modulus and/or a yield stress of the inner layer are less than an elastic modulus and/or a yield stress of the outer layer.

Insulated electric wire, production method therefor, coil and coil production method using same

There is provided an insulated flat rectangular conductor including: a flat rectangular conductor; and an insulating film coating the flat rectangular conductor, in which the flat rectangular conductor has a first surface and a second surface opposite to the first surface, and the first surface is rougher than the second surface.

Insulated flat rectangular conductor, coil, and method of producing insulated flat rectangular conductor

There is provided an insulated electric wire comprising a conductor wire coated by an insulating film, in which the insulating film contains 5 to 20% by mass of a low boiling point component having a boiling point of less than 300&#xb0; C. under normal pressure. The insulating film preferably has a thickness of 40 to 65 &#x3bc;m. The conductor wire preferably has a cross-sectional shape in a rectangular shape or a square shape.

Insulated electric wire, method for manufacturing same, and coil

A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000&#xb0; C. and equal to or lower than 1900&#xb0; C.; a first cooling process for cooling the first reaction product gas to a temperature of 950&#xb0; C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600&#xb0; C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600&#xb0; C. and equal to or lower than 950&#xb0; C., during the time that is equal to or more than 0.01 sec and equal to or less than 5 sec; and a second cooling process for cooling a second reaction product gas, which has been subjected to the second reaction process, to a temperature lower than 600&#xb0; C.

Apparatus and method for manufacturing trichlorosilane and method for manufacturing polycrystalline silicon

A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.

Apparatus for producing polycrystalline silicon

Method for producing polycrystalline silicon

A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.

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Naka-gun, Japan

Makoto Urushihara