Sharp Kabushiki Kaisha Corporation

Makoto Tsuji

Nobuyuki Miyauchi

Hiroshi Chikugawa

Katsushige Masui

Masaru Ogawa

Zenpei Tani

Takehiro Shiomoto

Hitoshi Saitoh

An LED light-emission device includes a substrate, an LED chip, a phosphor-containing resin containing a phosphor and covering the LED chip, and a diffusing agent-containing resin containing a diffusing agent that diffuses light emitted from the phosphor-containing resin and sealing the phosphor-containing resin. The LED chip, the phosphor-containing resin, and the diffusing agent-containing resin are placed on a same flat face of the substrate.

Light-emission device

Provided is a test socket capable of being used more flexibly for solid-state image pickup devices of different shapes and of performing locating of the solid-state image pickup devices more precisely. The test socket houses a device under test (DUT) which is a solid-state image pickup device while a test is being performed. The test socket comprises: first locating means for locating the DUT in an X direction parallel to a ceiling plane of the DUT in a housed state; urging means for urging the first locating means in a Z direction perpendicular to the ceiling plane of the DUT in the housed state; and position setting means for setting an upper limit of movement in the Z direction of the first locating means caused by the urging means to set a position in the Z direction of the first locating means relative to the DUT.

Test socket adjustable to solid state image pickup devices of different sizes

A semiconductor laser device includes a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion, a second lead extending along the lead portion of the first lead, and a retention portion made of an insulative material that integrally retains the first lead and the second lead. The mounting portion of the first lead has a back surface exposed from the retention portion, and the first lead further has a tie bar portion projecting from the mounting portion along the back surface of the mounting portion.

Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device

A semiconductor laser device aimed to be reduced in size and that can maintain high position accuracy, and a fabrication method of such a semiconductor laser device are achieved. A semiconductor laser device includes a stem as a base member, and a cap member. The stem includes a main unit having a reference plane, and a heat sink platform as an element mount unit, located on the reference plane for mounting a laser element. The cap member is set on the reference plane of the stem so as to cover the heat sink platform. A hole is formed at the sidewall of the cap member facing the heat sink platform. Fixation between the cap member and the stem is established by fixedly attaching the portion at the inner side of the sidewall of the cap member adjacent the hole to the outer circumferential plane of a heat sink platform.

Semiconductor laser device and fabrication method thereof

There is provided a semiconductor laser device which allows a stem body and a heat radiation block to be integrally fabricated even in small-size packages and which is low in price. Portions of leadsA,B protruding on a reference surface side are placed on one side surface side of the heat radiation blockon which the semiconductor laser chip is mounted. Further, a covermade of resin which is opened on the beam-output side of the semiconductor laser chipis fixed to the heat radiation blockso as to surround the semiconductor laser chipand the portions of the leadsA,B protruding on the reference-surface side in conjunction with the heat radiation block

Semiconductor laser devices

A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the laser chip. The base may have a monitor photodiode mounted thereon in the vicinity of the laser chip. The resin layer enclosing the laser chip or both of the laser chip and the monitor diode chip is made of a single synthetic resin having a thickness not greater than 500 .mu.m and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the laser chip.

Growing community of inventors

Kashihara, Japan

Makoto Tsuji