Oki Electric Industry Co., Ltd.

Oki Semiconductor Co., Ltd.

Makoto Terui

Noritaka Anzai

Takahiro Oka

Takashi Noguchi

Yasuo Tanaka

Yasushi Shiraishi

Mitsuhiko Ogihara

Motoki Kobayashi

Shinji Ohuchi

Morifumi Ohno

Masahiro Machida

Yuichi Deushi

A BGA substrate which has a back surface to which a heat radiating plate is attached and an opening for accommodating a relay wiring substrate therein, which is provided in the center of its surface, is used. The relay wiring substrate to which an ASIC chip and a memory chip are flip-chip connected, is bonded to the heat radiating plate in the opening with a thermal conductive bonding material. Further, each of the back surfaces of the ASIC chip and the memory chip is connected to a metal cap for sealing the opening through a thermal conductive material interposed therebetween.

Semiconductor device manufacturing method

A lead frame type of semiconductor apparatus includes a die pad on which a semiconductor chip is mounted; ground terminals which are to be grounded; power supply terminals which are connected to a power supply; inner leads connected to the ground terminals and power supply terminals, in which a pair of adjacent inner leads for power supply terminal and ground terminal are extended inwardly; a chip capacitor mounting pad which is provided at inner ends of the extended inner leads; and a chip capacitor which is mounted on the chip capacitor mounting pad so that a decoupling capacitor is provided.

Semiconductor apparatus with decoupling capacitor

Semiconductor device and manufacturing method thereof

With the objective of enabling a reduction in the size of a final semiconductor device and its thinning, and attaining facilitation of a manufacturing process, the semiconductor device includes a circuit chip having a flat mounted surface, a circuit chip smaller in size than the former circuit chip, and a sheet-like support. The latter circuit chip is formed over a substrate and has a flat back surface fixed to the substrate and a flat surface positioned on the side opposite to the back surface. The support is bonded to the surface of the latter circuit chip and supports the latter circuit chip. Then, the back surface of the latter circuit chip supported by the support is peeled from the substrate and pressed against the mounted surface, thereby fixing the back surface of the latter circuit chip and the mounted surface by an intermolecular bonding force (e.g., hydrogen bonding).

A fabricating method for a semiconductor device includes forming a heat spreading material on rear surface of the semiconductor wafer. The semiconductor wafer has a plurality of device areas and scribe lines which are arranged between the device areas. After the heat spreading material is formed on rear surface of the semiconductor wafer, the semiconductor wafer is separated at the scribe lines.

Method for fabricating a semiconductor device having a heat radiation layer

The present invention provides a semiconductor device which is applied to, for example, a WCSP (Wafer Level Chip Size Package) and comprises a semiconductor chip having a high-frequency circuit block, a plurality of electrode pads formed on the semiconductor chip, posts disposed between the high-frequency circuit block and the electrode pads within a horizontal plane and connected to their corresponding external terminals, and redistribution wiring layers that connect the electrode pads and the posts respectively.

Semiconductor device

A semiconductor device of a wafer level chip size package type is formed by cutting a semiconductor wafer with a plurality of semiconductor elements formed thereon in pieces. The semiconductor device includes a semiconductor substrate as the semiconductor wafer having a magnetic layer formed on at least one of a front surface and a backside surface of the semiconductor wafer.

Method of producing a semiconductor device having a magnetic layer formed thereon

When an integrated circuit is formed in a semiconductor wafer, the integrated circuit is formed only in the central part of each chip region. In a case where packaging other than a chip size package is made, only the central part in which the integrated circuit is formed is cut from the wafer. In a case where a chip size package is made, the chip region is cut from the wafer after forming the redistribution wiring and external terminals and so forth over the whole of the chip region. As a result, the design of the integrated circuit and part of the fabrication process thereof can be shared by a chip which is mounted in a chip size package and a chip which is mounted in another type of package.

Fabrication method for chip size package and non-chip size package semiconductor devices

A semiconductor device includes a semiconductor substrate having a main surface, the main surface including a first and second areas formed with a high-frequency circuit element, and a third area located around the first and second areas and formed with a low-frequency circuit element. The semiconductor device also includes a sealing resin which covers the main surface; a plurality of first external terminals which are formed above the third area and which are electrically connected to the high-frequency circuit element, the first external terminals protruding from the surface of the sealing resin. The semiconductor device further includes a plurality of second external terminals which are formed above the third area and which are electrically connected to the low-frequency circuit element, the second external terminals protruding from the surface of the sealing resin.

Semiconductor device that suppresses variations in high frequency characteristics of circuit elements

In a semiconductor device having a WCSP type construction package, to increase inductance without increasing further an area conventionally occupied by a coil. A pseudo-post partcomprising a magnetic body is extended in a direction perpendicular to a main surfaceof a semiconductor chipon a second insulating layerof a WCSPA first conductive partand a second conductive partconstructed as square frames are respectively provided so as to surround the pseudo-post part, on respective top surfaces of a second insulation layer and a third insulating layerwhich are separated parallel to each other, in an extension direction of the pseudo-post part. A coilbeing a substantially spiral shape conductive path is formed from, the first conductive part, the second conductive part, and a connection partwhich electrically connects the one ends of the first and second conductive parts.

Semiconductor device and method for fabricating the same

A semiconductor device includes a first circuit element chip including a first surface on which a plurality of first electrodes are arranged, and a second circuit element chip including a first surface on which a plurality of second electrodes are arranged. The second circuit element chip is mounted on the first circuit element chip. The semiconductor device further includes an insulating film disposed on a side surface of the second circuit element chip and disposed between the first surfaces of the first and second circuit element chips. The semiconductor device still further includes a resin layer covering the second circuit element chip and the insulating film. Also, there is provided a manufacturing method of the semiconductor device which includes forming the insulating film after the second circuit element chip is mounted on the first circuit element chip.

Semiconductor device including a plurality of circuit element chips and a manufacturing method thereof

A semiconductor chip package is formed by a first semiconductor chip and a second semiconductor chip, which have electrodes for wiring at surfaces thereof, being integrated and mounted in a state in which reverse surfaces thereof oppose one another. Therefore, two semiconductor chips can be freely combined and mounted regardless of chip sizes thereof, and lengths of wires can be shortened. Thus, a wire-bonding yield can be improved, and a semiconductor package having excellent electric characteristics can be obtained.

Growing community of inventors

Yamanashi, Japan

Makoto Terui