Nissan Motor Company Limited

Makoto Tanimura

Manabu Watanabe

Nobutaka Chiba

Tomohiro Kaburagi

Humihiro Miki

A negative electrode active material includes a silicon-containing alloy represented by: SiSnMA(A is unavoidable impurities, M is one or more transition metal elements, x, y, z, and a represent values of percent by mass, and 0&#x3c;x&#x3c;100, 0&#x3c;y&#x3c;100, 0&#x3c;z&#x3c;100, and 0&#x2264;a&#x3c;0.5 and x+y+z+a=100). The silicon-containing alloy has a lattice image subjected to Fourier transform processing to obtain a diffraction pattern. A distance between Si regular tetrahedrons is 0.39 nm or more when the distance between Si regular tetrahedrons in an amorphous region calculated from a Fourier image obtained by subjecting a diffraction ring portion present in a width of from 0.7 to 1.0 when a distance between Si regular tetrahedrons is 1.0 in this diffraction pattern to inverse Fourier transform is 10 nm or less.

Negative electrode active material for electric device and electric device using the same

A negative electrode active material includes a silicon-containing alloy having a composition represented by: SiSnMA(A is unavoidable impurities, M is one or more transition metal elements, x, y, z, and a represent values of percent by mass, and 0&#x3c;x&#x3c;100, 0&#x3c;y&#x3c;100, 0&#x3c;z&#x3c;100, and 0&#x2264;a&#x3c;0.5 and x+y+z+a=100). The silicon-containing alloy has a lattice image subjected to Fourier transform processing to obtain a diffraction pattern and a size determined as an average value of maximum five major axis diameters of regions having a periodic array from a Fourier image obtained by subjecting a diffraction ring portion present in a width of from 0.7 to 1.0 when a distance between Si regular tetrahedrons is 1.0 in this diffraction pattern to inverse Fourier transform is 10 nm or less.

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Kanagawa, Japan

Makoto Tanimura