Screen Holdings Co., Ltd.

Makoto Takaoka

Atsuyasu Miura

Tsuyoshi Okumura

Naoki Sawazaki

Nobuyuki Miyaji

Takashi Ota

Masato Tanaka

Kazuhiro Fujita

Hiroki Tsujikawa

Toru Edo

Yuya Tsuchihashi

Takashi Akiyama

Hiroshi Horiguchi

Shigeki Tanizawa

A processing condition selection method includes a step (S) and a step (S). In the step (S), a thickness pattern TM that represents a distribution of thicknesses measured at respective measurement points on a target is compared to pre-stored reference patterns (RP) to specify a reference pattern (RP) having a high correlation with the thickness pattern (TM) from among the reference patterns (RP) based on a prescriptive rule. In the step (S), a reference processing condition associated with the specified reference pattern (RP) is acquired as a processing condition for the target from among reference processing conditions associated with the respective reference patterns (RP). The reference patterns (RP) each represent a distribution of physical quantities of a corresponding one of reference targets. The reference processing conditions each are a processing condition when processing is previously performed on a corresponding one of the reference targets with a corresponding one of the reference patterns (RP).

Processing condition selection method, substrate processing method, substrate product production method, processing condition selecting device, computer program, and storage medium

A substrate processing method includes a liquid discharging step of discharging liquid through a nozzle toward a predetermined supply region on the main surface of a substrate held on a substrate holding unit within a chamber, a humidified gas supplying step of supplying humidified gas with a humidity higher than the humidity within the chamber onto the main surface of the substrate to remove electrical charges carried on the substrate, and a spin-drying step of rotating the substrate about a predetermined rotational axis after the liquid discharging step to spin off the liquid component from the main surface of the substrate. The humidified gas supplying step is started before the start of the liquid discharging step and ended at a predetermined termination timing after the start of the liquid discharging step and before the spin-drying step.

Substrate processing method and substrate processing device

A substrate processing method includes holding a substrate horizontally, supplying water-containing processing liquid to an upper surface of the substrate, forming a low surface tension liquid film, covering the upper surface by supplying that liquid to the substrate's upper surface, supplying a gas to a center region of the liquid film to form an opening in the center, widening the opening in order to remove the film, rotating the substrate around a predetermined rotational axis along a vertical direction, blowing, in the opening widening step, the gas toward a gas supply position that is set further inward than a peripheral edge of the opening on the upper surface of the substrate, and moving the gas supply position toward the peripheral edge of the upper surface of the substrate, and supplying, the low surface tension liquid toward a liquid landing position that is set further outward and moving the liquid landing position toward the peripheral edge of the upper surface of the substrate.

Substrate processing method and substrate processing apparatus

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Kyoto, Japan

Makoto Takaoka