Fujitsu Corporation

Makoto Suwada

Masaki Tosaka

Kazuhiko Tokuda

Jiro Yoneda

Tatsuo Koizumi

Shogo Fujimori

Yasuhiro Yamashita

Ryoji Yamada

Megumi Nagata

Shunji Baba

Masumi Suzuki

Michimasa Aoki

Manabu Watanabe

Jie Wei

Kenji Fukuzono

Takashi Kanda

Masateru Koide

Naoaki Nakamura

Daita Tsubamoto

Hitoshi Yokemura

Keizou Takemura

Mitsutaka Yamada

Yuzo Usui

Kenji Katsumata

Yoshiyuki Iwakura

Yuki Hoshino

Daisuke Usui

Shinichirou Okamoto

Yoshitsugu Goto

Kazunari Gotou

Shuichi Inoue

Akio Sekino

A semiconductor device in which a plurality of chips each including a memory circuit is stacked, the semiconductor device includes a transmission path including a plurality of microbumps formed in the plurality of chips, measurement circuitry that detects a reflected waveform when a signal is transmitted in the transmission path and measures propagation delay time for a certain part on the transmission path from the reflected waveform that has been detected, determination circuitry that calculates temperature of each memory area that corresponds to the certain part from the propagation delay time that has been measured by the measurement circuitry, and control circuitry that sets a refresh interval of each memory area, based on the temperature of each memory area, which has been calculated by the determination circuitry, and executes a refresh operation of the memory circuit in each memory area at the refresh interval that has been set.

Semiconductor device and control method for semiconductor device

A semiconductor device in which a plurality of chips each including a memory circuit are stacked, the semiconductor device includes measurement circuitry each of which is disposed in each of a plurality of memory areas of the plurality of chips and each of which measures a temperature, calculation circuitry that calculates a temperature of each of the memory areas based on the temperature measured by the measurement circuitry and a temperature obtained from a thermal resistance model of the semiconductor device, and control circuitry that sets a refresh interval of each of the memory areas based on the temperature of each of the memory areas, which has been calculated by the calculation circuitry, and performs a refresh operation of the memory circuit of each of the memory areas at the set refresh interval.

Semiconductor device and refresh rate control method of semiconductor device based on measured temperature

A substrate is disclosed, which can remove heat from a stacked body of semiconductor elements through a phase change of a coolant. The substrate of the application includes: a stacked body of semiconductor elements; a first channel forming a path, receiving circulation of a first coolant, in a surface of the stacked body; and a second channel forming a path, receiving circulation of a second coolant having a boiling point higher than the boiling point of the first coolant, in an inter-layer portion of the stacked body.

Method for manufacturing component built-in substrate

A semiconductor device includes a substrate; a first through-electrode penetrating the substrate and connected to a power source or a reference potential point; a second through-electrode penetrating the substrate; a power section connected between the substrate and the second through-electrode and configured to output a DC voltage between the substrate and the second through-electrode; a voltage control section configured to control the DC voltage to be output by the power section; and a measurement section connected to the first through-electrode and configured to measure a power impedance of the first through-electrode, wherein the voltage control section is configured to control a value of the DC voltage output by the power section, such that the power impedance of the first through-electrode measured by the measurement section is equal to or less than a predetermined value within a predetermined frequency range including a frequency of noise occurring in the first through-electrode.

Semiconductor device and method for setting voltage in semiconductor device

A package mounting structure includes: a first substrate having wiring; a second substrate having wiring; at least one cooling unit having a first face and a second face different from the first face; at least one power supply unit that is mounted on the first substrate and is joined to the first face of the cooling unit; and at least one electronic component that is mounted on the second substrate and is joined to the second face of the cooling unit, wherein the power supply unit supplies power to the electronic component through the wiring of the first substrate, the cooling unit, and the wiring of the second substrate.

Package mounting structure

An electronic part includes: a substrate; a first electrode configured to extend through the substrate and have a first opening size; a second electrode configured to extend through the substrate and have a second opening size; a switching section configured to switch between connection of the first electrode to a first power line and connection of the second electrode to the first power line; and a third electrode configured to extend through the substrate and be connected to a second power line different in potential from the first power line, a capacitance between the first and third electrodes and a capacitance between the second and third electrodes being different.

Electronic part, electronic device, and manufacturing method

A memory includes a control layer that includes a first radio communication unit that performs radio communication and a control unit that controls the radio communication; and a memory layer that includes a second radio communication unit that performs the radio communication with the first radio communication unit and a first storage unit that stores information, the memory layer being provided on the control layer.

Memory including wireless communication capability

A semiconductor device includes: a first semiconductor chip having a first antenna that is formed in a first hole provided in the first semiconductor chip, has an inclined surface inclined with respect to a central line of the first hole, and transmits and receives a radio wave; and a second semiconductor chip stacked over the first semiconductor chip, the second semiconductor chip having a second antenna that is formed in a second hole provided in the second semiconductor chip, has an inclined surface inclined with respect to a central line of the second hole, and transmits and receives a radio wave, wherein the first antenna and the second antenna are disposed so that the inclined surface of the first antenna and the inclined surface of the second antenna face each other.

Stacked three dimensional semiconductor device with in-circuit antenna

A design support apparatus acquires position information for a signal wire that is to be disposed in wiring layer stacked on an insulation layer. Subsequently, the design support apparatus acquires position information for an area obtained by projecting, in a direction for glass fiber bundles to be stacked on one another, the glass fiber bundles in an insulation layer actually used. The design support apparatus converts the position information for the signal wire that is to be disposed into position information for a position in the area of the glass fiber bundles such that the signal wire is included in the area of the glass fiber bundles in the insulation layer actually used. The design support apparatus outputs the converted position information.

Computer product, design support method, design support apparatus, and manufacture method

According to an aspect of the embodiment, a signal transmission apparatus includes a sine wave output unit that outputs a sine wave to a transmission path, network analyzers and that analyze signals on the transmission path, an S parameter measurement unit that measures S parameters based on the analysis, a selection unit that selects a plurality of combinations of an amplitude, an emphasis characteristic, and an equalization characteristic based on the S parameters, measurement units that measure a BER or an eye opening of the transmission path for the plurality of combinations, and a setting unit that extracts single combination based on the measurement and that sets the amplitude, the emphasis characteristic, and the equalization characteristic to a transmission unit and a reception unit.

Signal transmission apparatus and method

According to an aspect of the embodiment, According to an aspect of the invention, a signal transmission apparatus transmits a first signal to a transmission line. The apparatus measures a reflection characteristic of the transmission line based on a signal resulting from reflection of the first signal, and measures a transmission characteristic of the transmission line based on a signal resulting from transmission of the first signal through the transmission line. The apparatus determines a transmission clock frequency and a multi-value number based on the reflection characteristic and the transmission characteristic, and modulates information using the transmission clock frequency and the multi-value number to transmit a second signal resulting from the modulation to the transmission line. The apparatus receives the second signal through the transmission line and demodulates the received second signal.

Signal transmission apparatus and method of controlling the apparatus

A signal transmission apparatus comprises a first signal transmission section configured to transmit a first signal for performing measurement of characteristics of a transmission line to the transmission line. A reflection characteristic measurement section is configured to measure a reflection characteristic of the transmission line. A pass characteristic measurement section is configured to measure a pass characteristic of the transmission line. A determination section is configured to determine a transmission clock frequency based upon the reflection characteristic. A second signal transmission section is configured to modulate information and to transmit a second signal obtained by the modulation to the transmission line. A second signal receiving section is configured to receive and to demodulate the second signal which has been transmitted by the second signal transmission section and has passed the transmission line.

Signal transmission apparatus and signal transmission control method

A method of manufacturing a wiring substrate includes forming a conducting layer on a first insulating layer including a first glass cloth; forming a photosensitive resist layer on the conducting layer; recognizing a first origin position on the first insulating layer; forming a mask on the resist layer by positioning the mask with respect to the first origin position, the mask being formed so as to position wiring patterns only on positions overlapping the first glass cloth in a planar view; and exposing the resist layer via the mask and forming the wiring patterns only on the positions overlapping the first glass cloth in the planar view.

Method of manufacturing a wiring substrate

A modeling method creates a three-dimensional analysis model of a target object for extracting parameters that are used to analyze a high-frequency transmission, by selecting, from an art work data of the target object, an extraction target region that becomes a target for extracting the parameters that are used to analyze the high-frequency transmission, deleting non-extraction target elements of the extraction target region, that do not affect an electromagnetic analysis and are other than extraction target elements that affect the electromagnetic analysis, linearizing, from among the extraction target elements, a curved wiring, and optimizing a wiring length of the extraction target region including the linearized wiring and optimizing an analyzing space dimension of the extraction target region, so as to create the three-dimensional analysis model.

Growing community of inventors

Kawasaki, Japan

Makoto Suwada