Dai Nippon Printing Co., Ltd.

Mitsui Chemicals Tohcello, Inc.

Makoto Sukegawa

Jun Kamada

Naoya Hayashi

Noboru Kawasaki

Shinichi Usugi

Jin Kinoshita

Akimitsu Morimoto

Kouji Igarashi

This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G'bmin of the storage elastic modulus G&#x2032;b in the range of 25&#xb0; C. to less than 250&#xb0; C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G&#x2032;b250 at 250&#xb0; C. of 0.005 MPa or above, and a temperature at which G&#x2032;bmin is exhibited of 50-150&#xb0; C. The adhesive surface layer C has a minimum value G&#x2032;cmin of the storage elastic modulus G&#x2032;c in the range of 25&#xb0; C. to less than 250&#xb0; C. of 0.03 MPa.

Semiconductor wafer surface protection film and method for manufacturing semiconductor device

A phase shift photomask for forming a fine-line pattern with high dimensional accuracy even at different focus positions. The phase shift photomask has a transparent substrate (1) of quartz, for example, and a light-shielding film (2) of chromium, for example, provided on the substrate (1). The light-shielding film (2) is partially removed to form a first opening pattern (4a) and a second opening pattern (4b) with a very small width which is annularly provided in a peripheral region adjacent to the first opening pattern (4a). The light-shielding film (2c) is left in each of the four corners of the second opening pattern (4b). In addition, a phase shifter layer 3 is provided over either of the first or second opening patterns (4a, 4b).

Phase shift photomask

Growing community of inventors

Tokyo, Japan

Makoto Sukegawa